Abstract
The possibility of growing oriented AlN films on Al2O3 substrates at temperatures below 300°C by plasma-enhanced atomic layer deposition was examined. The samples were subjected to X-ray phase analysis and ellipsometry. It was demonstrated that the refraction index of films deposited with plasma exposures longer than 20 s was 2.03 ± 0.03. The (0002) and (0004) reflections at 2Θ angles of 35.7° and 75.9° were present in the X-ray diffraction patterns of these samples. These reflections are typical of the hexagonal AlN polytype. The full width at half maximum of the rocking curve of reflection (0002) in the best sample was 162 ± 11 arcsec.
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References
A. T. Sowers et al., Appl. Phys. Lett. 71, 2289 (1997).
W. Sahyoun et al., IEEE IEEE Trans. Sonics Ultrason. Freq. Control 58, 2162 (2011).
P. Ivaldi et al., in Proceedings of the Frequency Control Symposium (FCS), Newport Beach, CA, USA, June 1–4, 2010 (2010), p. 81.
D.-S. Tsai et al., Sci. Rep., No. 4, 2628 (2013).
M. Clement et al., Ultrasonics, No. 42, 403 (2004).
V. V. Ratnikov, D. V. Nechaev, V. N. Jmerik, and S. V. Ivanov, Tech. Phys. Lett. 42, 419 (2016).
J. Blasing et al., J. Appl. Phys. 105, 033504 (2009).
A. Kakanakova-Georgieva et al., J. Cryst. Growth 338, 52 (2012).
Y. A. Xi et al., Appl. Phys. Lett. 89, 103106 (2006).
N. Matsunami et al., Adv. Mater. Phys. Chem., No. 3, 101 (2013).
Y. J. Lee et al., Thin Solid Films 446, 227 (2004).
M. Bosund et al., Appl. Surf. Sci. 257, 7827 (2011).
M. Alevli et al., Phys. Status Solidi A 209, 266 (2012).
P. Motamedi et al., J. Cryst. Growth 421, 45 (2015).
M. Alevli et al., J. Vac. Sci. Technol. A 30, 021506 (2012).
N. Nepal et al., Appl. Phys. Lett. 103, 082110 (2013).
A. Boulle et al., J. Appl. Phys. 97, 073503 (2005).
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Original Russian Text © V.A. Tarala, A.S. Altakhov, M.G. Ambartsumov, V.Ya. Martens, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 1, pp. 67–73.
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Tarala, V.A., Altakhov, A.S., Ambartsumov, M.G. et al. Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition. Tech. Phys. Lett. 43, 74–77 (2017). https://doi.org/10.1134/S1063785017010138
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DOI: https://doi.org/10.1134/S1063785017010138