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The structure and photoconductivity of SiGe/Si epitaxial layers modified by single-pulse laser radiation

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Abstract

The effect of nanosecond pulses of ruby laser radiation on the structural state and morphology of the epitaxial layers of a SiO0.5Ge0.5 solid solution on silicon with the initiation of a crystal-melt phase transition has been studied by electron microscopy. Data on the photoelectric parameters of the laser-modified layers having a cellular structure owing to the segregation of germanium during the solidification of the binary melt have been derived.

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Authors and Affiliations

  1. Belarusian State University, Minsk, Belarus

    G. D. Ivlev, N. M. Kazuchits, S. L. Prakopyeu, M. S. Rusetsky & P. I. Gaiduk

Authors
  1. G. D. Ivlev
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  2. N. M. Kazuchits
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  3. S. L. Prakopyeu
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  4. M. S. Rusetsky
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  5. P. I. Gaiduk
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Correspondence to G. D. Ivlev.

Additional information

Original Russian Text © G.D. Ivlev, N.M. Kazuchits, S.L. Prakopyeu, M.S. Rusetsky, P.I. Gaiduk, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 23, pp. 9–15.

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Ivlev, G.D., Kazuchits, N.M., Prakopyeu, S.L. et al. The structure and photoconductivity of SiGe/Si epitaxial layers modified by single-pulse laser radiation. Tech. Phys. Lett. 40, 1042–1044 (2014). https://doi.org/10.1134/S1063785014120104

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  • DOI: https://doi.org/10.1134/S1063785014120104

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