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Determination of Silicon Carbide Structures Layer Thicknesses using Reflection Spectra Frequency Analysis

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Abstract

The paper introduces a method of determining thicknesses of single- and multi-layer silicon carbide structures using infrared reflection spectrum frequency analysis. Spectrum waveform is affected by spectral interference in layers or groups of layers. LabView software package offered a solution to perform spectral analysis. The results are provided both for model structures and experimental spectra. Model structure’ reflection spectrum was evaluated using a dielectric function that took into account the response of lattice vibrations and free charge carriers. Experimental spectra were obtained from a real multilayer structure manufactured for power electronics devices.

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Authors and Affiliations

  1. St. Petersburg State Electrotechnical University “LETI,”, 197376, St. Petersburg, Russia

    M. F. Panov & M. V. Pavlova

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  1. M. F. Panov
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  2. M. V. Pavlova
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Correspondence to M. F. Panov.

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Panov, M.F., Pavlova, M.V. Determination of Silicon Carbide Structures Layer Thicknesses using Reflection Spectra Frequency Analysis. Tech. Phys. 66, 779–783 (2021). https://doi.org/10.1134/S1063784221050182

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