Abstract—The development of semiconductor integrated technology and the transition to nanometer resolution of the lithographic process has led to the development of semiconductor field-emission structures. However, the set of technologies for manufacturing field-emission devices has not, at present, been widely introduced into production and commercialization due to their short service life and insufficient operational stability. The work provides a comparative analysis of the significant results obtained to date on the development of semiconductor field-emission structures with a nanoscale conduction channel in order to assess the current state and prospects for further development of vacuum nanoelectronics. Technological and operational problems in the development of nanoscale field-emission triode structures using various semiconductor materials are analyzed. The progress achieved in the field of integrating nanoscale field-emission structures with standard complementary metal—oxide—semiconductot (CMOS) transistors is shown. Possible areas of the application of vacuum nanoelectronic structures are considered. The current tasks of this scientific field are described, as well as problems arising in the process of introducing the elemental base of vacuum nanoelectronics into the cycle of development and commercialization of vacuum IC technology.
REFERENCES
R. H. Fowler and L. Nordheim, Proc. R. Soc. London, Ser. A 119 (781), 173 (1928). https://doi.org/10.1098/rspa.1928.0091
L. Nordheim, Ann. Phys. 401, 607 (1931). https://doi.org/10.1002/andp.19314010507
R. G. Forbes, J. Appl. Phys. 126, 210901 (2019). https://doi.org/10.1063/1.5117289
M. Marquez-Mijares and B. Lepetit, J. Appl. Phys. 126, 065107 (2019). https://doi.org/10.1063/1.5094238
R. G. Forbes, in Modern Developments in Vacuum Electron Sources, Ed. by G. Gaertner, W. Knapp, and R. G. Forbes (Springer, Cham, 2020), p. 387. https://doi.org/10.1007/978-3-030-47291-7_9
R. G. Forbes, in Proceedings of the 2020 29th International Symposium on Discharges and Electrical Insulation in Vacuum (ISDEIV) (IEEE, Padova, 2021), p. 3. https://doi.org/10.1109/ISDEIV46977.2021.9587119
K. L. Jensen, IEEE Trans. Plasma Sci. 46, 1881 (2018). https://doi.org/10.1109/TPS.2017.2782485
K. L. Jensen, J. Appl. Phys. 126, 065302 (2019). https://doi.org/10.1063/1.5109676
B. Lepetit, J. Appl. Phys. 122, 215105 (2017). https://doi.org/10.1063/1.5009064
B. Lepetit, J. Appl. Phys. 129, 144302 (2021). https://doi.org/10.1063/5.0047771
A. Kyritsakis and F. Djurabekova, Comput. Mater. Sci. 128, 15 (2017). https://doi.org/10.1016/j.commatsci.2016.11.010
A. Kyritsakis, M. Veske, and F. Djurabekova, New J. Phys. 23, 063003 (2021). https://doi.org/10.1088/1367-2630/abffa8
N. V. Egorov and E. P. Sheshin, Field Emission Electronics (Intellekt, Dolgoprudnyi, 2011; Springer, Cham, 2017).
G. N. Fursey, Field Emission in Vacuum Microelectronics (Lan’, St. Petersburg, 2012; Springer, New York, 2005).
D. A. Buck and K. R. Shoulders, in Proceedings of the Eastern Joint Computer Conference: Modern Computers: Objectives, Designs, Applications AIEE-ACM-IRE '58 Eastern, Dec. 3–5, 1958 (ACM Press, New York, 1958), p. 55. https://doi.org/10.1145/1458043.1458057
K. R. Shoulders, Adv. Comput. 2, 135 (1961). https://doi.org/10.1016/S0065-2458(08)60142-4
C. A. Spindt and K. R. Shoulders, in Proceedings of the IEEE 1966 8th Conference on Tube Techniques (IEEE, New York, 1966), p. 143.
C. A. Spindt, J. Appl. Phys. 39, 3504 (1968). https://doi.org/10.1063/1.1656810
S. A. Spindt, I. Brodie, L. Humphrey, and E. R. Westerberg, J. Appl. Phys. 47, 5248 (1976). https://doi.org/10.1063/1.322600
M. I. Elinson and G. F. Vasil’ev, USSR Inventor’s Certificate No. 107388 (1957).
N. A. Dyuzhev and A. B. Ishkarin, RF Patent No. 2044363 (1995).
S. G. Jennings, J. Aerosol Sci. 19, 159 (1988). https://doi.org/10.1016/0021-8502(88)90219-4
S. Nirantar, T. Ahmed, M. Bhaskaran, et al., Adv. Intell. Syst. 1, 1900039 (2019). https://doi.org/10.1002/aisy.201900039
W. B. Nottingham, Phys. Rev. 59, 906 (1941). https://doi.org/10.1103/PhysRev.59.906.2
G. A. Mesyats, Explosive Electron Emission (Fizmatlit, Moscow, 2011) [in Russian].
Z. Huang, Y. Huang, Z. Pan, et al., Appl. Phys. Lett. 109, 233501 (2016). https://doi.org/10.1063/1.4971336
S. A. Guerrera and A. I. Akinwande, Nanotechnology 27, 295302 (2016). https://doi.org/10.1088/0957-4484/27/29/295302
A. G. Kolosko, E. O. Popov, and S. V. Filippov, Tech. Phys. Lett. 45, 304 (2019). https://doi.org/10.1134/S1063785019030283
H. Toijala, K. Eimre, A. Kyritsakis, et al., Phys. Rev. B 100, 165421 (2019). https://doi.org/10.1103/PhysRevB.100.165421
S. Fujita and H. Shimoyama, Phys. Rev. B 75, 235431 (2007). https://doi.org/10.1103/PhysRevB.75.235431
Y. Honda, M. Nanba, K. Miyakawa, et al., IEEE Trans. Electron Dev. 63, 2182 (2016). https://doi.org/10.1109/TED.2016.2545710
M. Nagao, Y. Gotoh, Y. Neo, and H. Mimura, J. Vac. Sci. Technol. B 34, 02G108 (2016). https://doi.org/10.1116/1.4944453
N. Deka and V. Subramanian, IEEE Trans. Electron Dev. 67, 3753 (2020). https://doi.org/10.1109/TED.2020.3006167
W.-T. Chang, T.-Y. Chuang, and Ch.-W. Su, Microelectron. Eng. 232, 111418 (2020). https://doi.org/10.1016/j.mee.2020.111418
W.-T. Chang, M.-Ch. Cheng, T.-Y. Chuang, and M.-Y. Tsai, Nanomaterials 10, 2378 (2020). https://doi.org/10.3390/nano10122378
S. Nirantar, T. Ahmed, G. Ren, et al., Nano Lett. 18, 7478 (2018). https://doi.org/10.1021/acs.nanolett.8b02849
L. B. De Rose, A. Scherer, and W. M. Jones, IEEE Trans. Electron Dev. 67, 5125 (2020). https://doi.org/10.1109/TED.2020.3019765
J. Xu, H. Hu, W. Yang, et al., Nanotechnology 31, 065202 (2020). https://doi.org/10.1088/1361-6528/ab51cb
J. Xu, C. Lin, Y. Shi, et al., Micromachines 13, 1274 (2022). https://doi.org/10.3390/mi13081274
S. Srisonphan, IEEE Electron Dev. Lett. 42, 1540 (2021). https://doi.org/10.1109/LED.2021.3103557
F. Giubileo, A. di Bartolomeo, L. Iemmo, et al., Appl. Sci. 8, 526 (2018). https://doi.org/10.3390/app8040526
M.-J. Youh, C.-S. Lin, N.-W. Pu, et al., Vacuum 177, 109382 (2020). https://doi.org/10.1016/j.vacuum.2020.109382
Z. Ya. Lvin, E. P. Sheshin, N. Ch. Chzho, et al., Tr. MFTI 10 (2), 30 (2018).
V. I. Shesterkin, J. Commun. Technol. Electron. 65, 1 (2020). https://doi.org/10.1134/S1064226920010040
N. Dwivedi, Ch. Dh, J. D. Carey, et al., J. Mater. Chem. C 9, 2620 (2021). https://doi.org/10.1039/D0TC05873D
A. V. Eletskii, Phys. Usp. 53, 863 (2010).
K. S. Novoselov, A. K. Geim, S. V. Morozov, et al., Science (Washington, DC, U. S.) 306 (5696), 666 (2004). https://doi.org/10.1126/science.1102896
N. V. Egorov and E. P. Sheshin, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 11, 285 (2017). https://doi.org/10.1134/S1027451017020082
Z. Xiao, J. She, S. Deng, et al., ACS Nano 4, 6332 (2010). https://doi.org/10.1021/nn101719r
X. Shao, A. Srinivasan, W. K. Ang, and A. Khursheed, Nat. Commun. 9, 1288 (2018). https://doi.org/10.1038/s41467-018-03721-y
T. Sato, S. Yamamoto, M. Nagao, et al., J. Vac. Sci. Technol. B 21, 1589 (2003). https://doi.org/10.1116/1.1569933
R. Patra, S. Ghosh, E. Sheremet, et al., J. Appl. Phys. 116, 164309 (2014). https://doi.org/10.1063/1.4898352
A. N. Obraztsov, I. Yu. Pavlovsky, A. P. Volkov, et al., J. Electrochem. Soc. 145, 2572 (1998). https://doi.org/10.1149/1.1838682
Handbook of Semiconductor Manufacturing Technology, Ed. by R. Doering and Y. Nishi, 2nd ed. (CRC, Boca Raton, FL, 2008).
T. T. Tsong, Surf. Sci. 81, 28 (1979). https://doi.org/10.1016/0039-6028(79)90503-X
R. N. Thomas, R. A. Wickstrom, D. K. Schroder, and H. C. Nathanson, Solid-State Electron. 17, 155 (1974). https://doi.org/10.1016/0038-1101(74)90063-X
V. I. Makhov, N. A. Dyuzhev, and I. V. Pinaev, in Proceedings of the 19th All-Union Conference on Emission Electronics, Tashkent, Sept. 1984 (Fan, Tashkent, 1984), p. 45.
N. A. Dyuzhev, M. A. Makhiboroda, and V. E. Skvor-tsov, in Proceedings of the Rusnanotech'08: International Forum on Nanotechnologies, Moscow, December 3–5, 2008 (Ross. Korp. Nanotekhnol., Moscow, 2008), Vol. 2.
N. A. Djuzhev, G. D. Demin, N. A. Filippov, I. D. Evsi-kov, P. Yu. Glagolev, M. A. Makhiboroda, N. I. Chkhalo, N. N. Salashchenko, S. V. Filippov, A. G. Kolosko, E. O. Popov, and V. A. Bespalov, Tech. Phys. 64, 1742 (2019). https://doi.org/10.1134/S1063784219120053
C. Bohling and W. Sigmund, Silicon 8, 339 (2016). https://doi.org/10.1007/s12633-015-9366-8
C.-C. Wu, K.-L. Ou, and C.-L. Tseng, Nanoscale Res. Lett. 7, 120 (2012). https://doi.org/10.1186/1556-276X-7-120
V. I. Makhov, in Proceedings of the 2nd INT Conference on Vacuum Microelectronics, Bath, UK (Taylor and Francis, Bristol, 1989), p. 235.
C.-M. Park, M.-S. Lim, and M.-K. Han, IEEE Electron Dev. Lett. 18, 538 (1997). https://doi.org/10.1109/55.641438
S. Han, S. Yang, T. Hwang, et al., Jpn. J. Appl. Phys. 39, 2556 (2000). https://doi.org/10.1143/JJAP.39.2556
J.-W. Han, Jae Sub Oh, and M. Meyyappan, Appl. Phys. Lett. 100, 213505 (2012). https://doi.org/10.1063/1.4717751
J.-W. Han, D.-I. Moon, and M. Meyyappan, Nano Lett. 17, 2146 (2017). https://doi.org/10.1021/acs.nanolett.6b04363
CRC Handbook of Chemistry and Physics: A Ready-Reference Book of Chemical and Physical Data, 2016–2017, Ed. by W. M. Haynes, D. R. Lide, and T. J. Bruno, 97th ed. (CRC, Boca Raton, FL, 2016).
C. J. H. Wort and R. S. Balmer, Mater. Today 11, 22 (2008). https://doi.org/10.1016/S1369-7021(07)70349-8
SiC Materials and Devices, Ed. by M. Shur, S. L. Ru-myantsev, and M. E. Levinshtein (World Scientific, NJ, 2006), Vol. 1.
J.-W. Han, M.-L. Seol, D.-I. Moon, et al., Nat. Electron. 2, 405 (2019). https://doi.org/10.1038/s41928-019-0289-z
A. M. Kondratyev and A. D. Rakhel, Phys. Rev. Lett. 122, 175702 (2019). https://doi.org/10.1103/PhysRevLett.122.175702
K. Subramanian, W. P. Kang, and J. L. Davidson, IEEE Electron Dev. Lett. 29, 1259 (2008). https://doi.org/10.1109/LED.2008.2005516
K. Subramanian, W. P. Kang, J. L. Davidson, et al., Microelectron. Eng. 88, 2924 (2011). https://doi.org/10.1016/j.mee.2011.03.161
N. Ghosh, W. P. Kang, and J. L. Davidson, Electron. Lett. 47, 926 (2011). https://doi.org/10.1049/el.2011.1586
N. Ghosh, W. P. Kang, and J. L. Davidson, Diamond Rel. Mater. 23, 120 (2012). https://doi.org/10.1016/j.diamond.2012.01.030
S. H. Hsu, W. P. Kang, J. L. Davidson, et al., J. Appl. Phys. 111, 114502 (2012). https://doi.org/10.1063/1.4723833
S. H. Hsu, W. P. Kang, S. Raina, and J. H. Huang, Appl. Phys. Lett. 102, 203105 (2013). https://doi.org/10.1063/1.4807128
S.-H. Hsu, W. P. Kang, S. Raina, et al., J. Vac. Sci. Technol. B 35, 032201 (2017). https://doi.org/10.1116/1.4981018
G. Nabi, Mater. Today Commun. 25, 101287 (2020). https://doi.org/10.1016/j.mtcomm.2020.101287
P.-C. Shih, G. Rughoobur, K. Cheng, et al., IEEE Electron Dev. Lett. 42, 422 (2021). https://doi.org/10.1109/LED.2021.3052715
J.-W. Han, Jae Sub Oh, and M. Meyyappan, IEEE Trans. Nanotechnol. 13, 464 (2014). https://doi.org/10.1109/TNANO.2014.2310774
J. Itoh, T. Hirano, and S. Kanemaru, Appl. Phys. Lett. 69, 1577 (1996). https://doi.org/10.1063/1.117035
W. Yang, J. She, S. Deng, and N. Xu, IEEE Trans. Electron Dev. 59, 3641 (2012). https://doi.org/10.1109/TED.2012.2220548
M. Zeng, Yi. Huang, Yu. Huang, et al., IEEE Electron Dev. Lett. 43, 466 (2022). https://doi.org/10.1109/LED.2022.3148397
N. I. Tatarenko and V. F. Kravchenko, Field Emission Nanostructures and Devices Based on Them (Fizmatlit, Moscow, 2006) [in Russian].
N. A. Dyuzhev, M. A. Makhiboroda, and V. L. Fedirko, in Proceedings of the 14th Conference on Vacuum Science and Engineering, Sochi, October 8–15, 2007 (MIEM, Sochi, 2007), p. 248.
M. E. Crost, K. Shoulders, and M. H. Zinn, US Patent 3500102 (1970).
R. Meyer, in Technical Digest of Japan Display'86 Conference (1986), p. 513.
H. H. Busta, in Vacuum Microelectronics, Ed. by W. Zhu (Wiley, Chichester, 2001), p. 289. https://doi.org/10.1002/0471224332.ch7
M. L. Terranova, S. Orlanducci, M. Rossi, and E. Tamburri, Nanoscale 7 (12), 5094 (2015). https://doi.org/10.1039/C4NR07171A
A. Basu, M. E. Swanwick, A. A. Fomani, and L. F. Velasquez-Garcia, J. Phys. D: Appl. Phys. 48, 225501 (2015). https://doi.org/10.1088/0022-3727/48/22/225501
T. Grzebyk, P. Szyszka, M. Krysztof, et al., J. Vac. Sci. Technol. B 37, 022201 (2019). https://doi.org/10.1116/1.5068750
E. P. Sheshin, A. Yu. Kolodyazhnyj, N. N. Chadaev, et al., J. Vac. Sci. Technol. B 37, 031213 (2019). https://doi.org/10.1116/1.5070108
J. Zhang, J. Wei, D. Li, et al., Nanomaterials 11, 1636 (2021). https://doi.org/10.3390/nano11071636
J. Kinoshita, R. Ikeda, M. Adachi, et al., Trans. Jpn. Soc. Aero. Space Sci. 64, 288 (2021). https://doi.org/10.2322/tjsass.64.288
S. T. Yoo, J. Y. Lee, A. Rodiansyah, et al., Curr. Appl. Phys. 28, 93 (2021). https://doi.org/10.1016/j.cap.2021.05.007
L. Fan, J. Bi, B. Zhao, et al., IEEE Sensors J. 22, 23806 (2022). https://doi.org/10.1109/JSEN.2022.3218466
K. Harafuji, T. Tsuchiya, and K. Kawamura, J. Appl. Phys. 96, 2501 (2004). https://doi.org/10.1063/1.1772878
F. Sechi and M. Bujatti, Solid-State Microwave High-Power Amplifiers (Artech House, London, 2009).
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The work was carried out with the financial support of the Russian Foundation for Basic Research (project no. 20-12-50312\20).
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Dyuzhev, N.A., Evsikov, I.D. Vacuum Nanoelectronics Based on Semiconductor Field-Emission Structures: Current State and Development Prospects. Review. Semiconductors 57, 65–80 (2023). https://doi.org/10.1134/S1063782623010037
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DOI: https://doi.org/10.1134/S1063782623010037