Abstract
A set of ab initio calculations of the energy of the ground state as a function of volume, elastic properties, and phonon spectra of tin selenide in its different crystal modifications has been performed. Based on the data set we obtained, the SnSe interatomic interaction potential has been built by implementing the atomic cluster expansion method. The potential has been used to study the temperature dependences of the thermal and elastic characteristics of SnSe in the quasi-harmonic approximation.
Similar content being viewed by others
REFERENCES
Z.-G. Chen, X. Shib, L. Zhaoc, and J. Zoub, Prog. Mater. Sci. 97, 283 (2018).
L.-D. Zhao, C. Chang, G. Tan, and M. G. Kanatzidis, Energy Environ. Sci. 9, 3044 (2016).
T. Lanigan-Atkins, S. Yang, J. L. Niedziela, et al., Nat. Commun. 11, 4430 (2020).
Y. Lu, F. Zheng, and Y. Yang, et al., Phys. Rev. B 100, 054304 (2019).
U. Aseginolaza, R. Bianco, L. Monacelli, et al., Phys. Rev. Lett. 122, 075901 (2019).
J. S. Kang, H. Wu, M. Li, and Y. Hu, Nano Lett. 19, 4941 (2019).
D. Wang, W. He, C. Chang, et al., J. Mater. Chem. C 6, 12016 (2018).
G. Liu, P. Parajuli, R. Rao, et al., Phys. Chem. Chem. Phys. 19, 15187 (2017).
H. Yu, S. Dai, and Y. Chen. Sci. Rep. 6, 26193 (2016).
A. Dewre, O. Hellman, S. Bhattacharya, et al., Phys. Rev. Lett. 117, 276601 (2016).
Y. Xiao, C. Chang, Y. Pei, et al., Phys. Rev. B 94, 125203 (2016).
J. M. Skelton, C. E. Kim, J. Buckeridge, A. Togo, et al., Phys. Rev. Lett. 117, 075502 (2016).
R. Drautz, Phys. Rev. B 99, 014104 (2019).
Y. Lysogorskiy, C. v. d. Oord, A. Bochkarev, et al., npj Comput. Mater. 7, 97 (2021).
R. Golesorkhtabar, P. Pavone, J. Spitaler, P. Puschnig, and C. Draxl, Comput. Phys. Commun. 184, 1861 (2013).
S. Plimpton, J. Comp. Phys. 117, 1 (1995).
http://lammps.sandia.gov.
G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993).
G. Kresse and G. Furthmüller, Phys. Rev. B 54, 11169 (1996).
P. E. Blöchl, O. Jepsen and O. K. Andersen, Phys. Rev. B 49, 16223 (1994).
J. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996).
J. Janssen, S. Surendralal, Y. Lysogorskiy, M. Todorova, T. Hickel, R. Drautz, and J. Neugebauer, Comput. Mater. Sci. 163, 24 (2019).
A. H. Larsen, J. J. Mortensen, J. Blomqvist, et al., J. Phys.: Condens. Matter 29, 273002 (2017).
S. Chen, K. F. Cai and W. Zhao, Phys. B (Amsterdam, Neth.) 407, 4154 (2012).
H. G. von Schnering and H. Wiedemeier, Z. Kristallogr. 156, 143 (1981).
I. R. Nuriev and A. K. Sharifova, Sov. Phys. Crystallogr. 34, 635 (1989).
A. Jain, S. P. Ong, G. Hautier, et al., APL Mater. 1, 011002 (2013).
P. Ravindran, L. Fast, P. A. Korzhavyi, et al., J. Appl. Phys. 84, 4891 (1998).
A. Karunarathne, J. R. Gladden, and G. Priyadarshan, ACS Appl. Energy Mater. 1, 6123 (2018).
M. de Jong, W. Chen, T. Angsten, et al., Sci. Data 2, 150009 (2015).
A. Togo and I. Tanaka, Scr. Mater. 108, 1 (2015).
A. Karunarathne, P. Parajuli, G. Priyadarshan, et al., Phys. Rev. B 103, 054108 (2021).
F. Liu, P. Parajuli, R. Rao, et al., Phys. Rev. B 98, 224309 (2018).
S. R. Popuri, M. Pollet, R. Decourt, et al., Appl. Phys. Lett. 110, 253903 (2017).
S. Sassi, C. Colfi, J.-B. Vaney, et al., Appl. Phys. Lett. 104, 212105 (2014).
C.-H. Lee, M.-H. Ma, W.-H. Li, et al., Mater. Today Phys. 11, 100171 (2019).
A. N. Filanovich and A. A. Povzner, Phys. B (Amsterdam, Neth.) 527, 16 (2017).
Funding
The study was supported by the Ministry of Science and Higher Education of the Russian Federation (project no. 2291-21) and the German Academic Exchange Service DAAD (project no. 57515328), Program Mikhail Lomonosov. The data analysis and interpretation were carried out within the state assignment no. FEUZ-2020-0020 of the Ministry of Science and Higher Education of the Russian Federation.
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
The authors declare that they have no conflicts of interest.
Additional information
Translated by E. Bondareva
Rights and permissions
About this article
Cite this article
Filanovich, A.N., Lysogorskiy, Y.V. & Povzner, A.A. Atomistic Simulation of the Lattice Properties of SnSe. Semiconductors 56, 169–174 (2022). https://doi.org/10.1134/S1063782622020051
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782622020051