Abstract
Scanning electron microscopy is used for studies of the initial stages of the formation of semipolar AlN (10\(\bar {1}\)1) and AlN (10\(\bar {1}\)2) layers during metal–organic vapor-phase epitaxy on a Si (100) substrate with a surface, on which a V-shaped nanostructure, whose elements are <100 nm in dimensions, is formed (a NP-Si(100) substrate). It is shown that, in the initial stage of epitaxy on the NP-Si(100) substrate, nuclei of AlN crystals are formed and then, depending on the crystallographic orientation of the V walls, crystals faceted by AlN (10\(\bar {1}\)1) or AlN (10\(\bar {1}\)2) planes are formed, correspondingly, on Si (111) or Si (111) misoriented in the [110] direction by 7°.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
REFERENCES
T. Wang, Semicond. Sci. Technol. 31, 093003 (2016).
M. Yang, W. Wang, Y. Lin, W. Yangand, and G. Li, Mater. Lett. 182, 277 (2016).
F. Scholz, T. Meisch, and K. Elkhouly, Phys. Status Solidi A 213, 3117 (2016).
A. Bourret, A. Barski, J. L. Rouviére, G. Renaud, and A. Barbier, J. Appl. Phys. 83, 2003 (1998).
N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, and M. Yamaguchi, J. Cryst. Growth 311, 2867 (2009).
T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki, Phys. Status Solidi C 5, 2966 (2008).
J.-M. Liu, J. Zhang, W.-Y. Lin, M.-X. Ye, X.-X. Feng, D.-Y. Zhang, S. Dinga, Ch.-K. Xu, and B.-L. Liu, Chin. Phys. B 24, 57801 (2015).
V. N. Bessolov, M. E. Kompan, E. V. Konenkova, and V. N. Panteleev, Tech. Phys. Lett. 46, 59 (2020).
V. N. Bessolov, E. V. Konenkova, S. N. Rodin, D. S. Kibalov, and V. K. Smirnov, Semiconductors 55, 471 (2021).
Q. Bao, T. Zhu, N. Zhou, S. Guo, and J. Luo, J. Cryst. Growth 419, 52 (2015).
X. H. Liu, J. C. Zhang, J. Huang, M. M. Yang, X. J. Su, B. B. Ye, J. F. Wang, J. P. Zhangand, and K. Xu, Mater. Express 6, 367 (2016).
H.-J. Leea, S.-Y. Baeb, K. Lekhalb, A. Tamuraa, T. Suzukia, M. Kushimotoa, Y. Hondab, and H. Amano, J. Cryst. Growth 468, 547 (2017).
L. Zhang, J. Wu, F. Liu, T. Han, X. Zhu, M. Li, Q. Zhao, and T. J. Yu, CrystEngComm. (2021, in press). https://doi.org/10.1039/D1CE00040C
V. K. Smirnov, D. S. Kibalov, O. M. Orlov, and V. V. Graboshnikov, Nanotechnology 14, 709 (2003).
V. Bessolov, E. Konenkova, S. Konenkov, S. Rodin, and N. Seredova, J. Phys.: Conf. Ser. 1697, 012099 (2020).
A. N. Furs, Crystallogr. Rep. 64, 631 (2019).
T. Liu, J. Zhang, X. Su, J. Huang, J. Wang, and K. Xu, Sci. Rep. 6, 26040 (2016).
C. Bayram, J. A. Ott, K.-T. Shiu, Ch.-W. Cheng, Y. Zhu, J. Kim, M. Razeghi, and D. K. Sadana, Adv. Funct. Mater. 24, 4492 (2014).
R. Liu, F. A. Ponce, A. Dadgar, and A. Krost, Appl. Phys. Lett. 83, 860 (2003).
L. Huang, Y. Li, W. Wang, X. Li, Y. Zheng, H. Wang, and G. Li, Appl. Surf. Sci. 435, 163 (2018).
X. G. Banal, M. Funato, and Y. Kawakami, Phys. Status Solidi C 6, 599 (2009).
V. Jindala and F. Shahedipour-Sandvik, J. Appl. Phys. 105, 084902 (2009).
V. N. Bessolov, E. V. Konenkova, S. A. Kukushkin, A. V. Osipov, and S. N. Rodin, Rev. Adv. Mater. Sci. 38, 75 (2014).
ACKNOWLEDGMENTS
We thank the company “Quantum Silicon, Ltd.” (Moscow, Russia) for putting at our disposal the nanopatterned Si(100) substrates. We are grateful to V.K. Smirnov for helpful discussions.
Funding
The study was supported in part by the Russian Foundation for Basic Research, project no. 20-08-00096.
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated by E. Smorgonskaya
Rights and permissions
About this article
Cite this article
Bessolov, V.N., Konenkova, E.V., Orlova, T.A. et al. Initial Stages of Growth of Semipolar AlN on a Nanopatterned Si(100) Substrate. Semiconductors 55, 812–815 (2021). https://doi.org/10.1134/S1063782621100043
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782621100043