Skip to main content
SpringerLink
Log in

Infrared (850 nm) Light-Emitting Diodes with Multiple InGaAs Quantum Wells and “Back” Reflector

  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

Investigation of IR light emitting diodes (wavelength 850 nm) based on AlGaAs/GaAs heterostructures with multiple quantum wells in the region generating radiation grown by the MOCVD technique has been carried out. Post-growth technologies for removing the substrate and for transfer the heterostructure on an alien carrier with an optical reflector have been developed. Technological regimes for fabricating the reflector have been optimized, and the increase of the IR radiation reflection coefficient up to 92–93% has been achieved. Light-emitting diodes with the external quantum efficiency 28.5% have been fabricated.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.
Fig. 6.

Similar content being viewed by others

REFERENCES

  1. Zh. I. Alferov, V. M. Andreev, D. Z. Garbuzov, N. Yu. Davidyuk, B. V. Egorov, B. V. Pushnyi, and L. T. Chichua, Sov. Phys. Semicond. 12, 475 (1978).

  2. U. Bekirev, S. Babenko, V. Kryukov, B. Potapov, and A. Skiper, Elektron. NTB 00137, 137 (2014).

  3. Inst. Semicond. Devices. https://www.niipp.ru/.

  4. S. Ilelek, A. Plossol, K. Streubel, W. Wegleiter, and R. Wirth, US Patent No. 2006/0180820 A1 (2006).

  5. https://www.epistar.com/EpistarEn/prodInfo.

  6. S.-Ch. Ahn,  B.-T. Lee,  W.-Ch. An,  D.-K. Kim, I.-K. Jang, J.-S. So, and H.-J. Lee, Phys. Soc. 69, 91 (2016).

    Google Scholar 

  7. C. G. van de Walle, Phys. Rev. 39, 1871 (1989).

    Article  ADS  Google Scholar 

Download references

ACKNOWLEDGMENTS

The authors express their gratitude to N.D. Il’inskaya, Y.M. Zadiranov, P.V. Pokrovskiy, A.N. Panchak, R.A. Salii, N.S. Potapovich, A.A. Blokhin, A.V. Andreeva for the help and consultations during carrying out experiments.

A.М. Nadtochiy thanks for the support in investigations by the photoluminescence method the Program of fundamental investigations of National Research University Higher School of Economics in 2021.

Author information

Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    A. V. Malevskaya, N. A. Kalyuzhnyy, D. A. Malevskii, S. A. Mintairov, M. V. Nakhimovich, F. Y. Soldatenkov, M. Z. Shvarts & V. M. Andreev

  2. National Research University Higher School of Economics, 190008, St. Petersburg, Russia

    A. M. Nadtochiy

Authors
  1. A. V. Malevskaya
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. N. A. Kalyuzhnyy
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. D. A. Malevskii
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. S. A. Mintairov
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. A. M. Nadtochiy
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. M. V. Nakhimovich
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. F. Y. Soldatenkov
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. M. Z. Shvarts
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. V. M. Andreev
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. V. Malevskaya.

Ethics declarations

The authors declare that they have no conflict of interest.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Malevskaya, A.V., Kalyuzhnyy, N.A., Malevskii, D.A. et al. Infrared (850 nm) Light-Emitting Diodes with Multiple InGaAs Quantum Wells and “Back” Reflector. Semiconductors 55, 686–690 (2021). https://doi.org/10.1134/S1063782621080121

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782621080121

Keywords:

Search

Navigation