Abstract
An analysis of the I–V characteristics makes it possible to determine the mechanisms of conduction corresponding to different states of the flow channels upon resistive switching in porphyrazine films. A variation in the temperature, the structure of the dielectric matrix, and the type of majority charge carriers makes it possible to estimate the applicability of the model of conducting filaments for describing transport and determining the mechanisms of conduction for each state of the system.
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The study was supported by the Russian Foundation for Basic Research, project no. 20-32-70118.
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Translated by V. Bukhanov
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Drozdov, K.A., Krylov, I.V., Vasilik, V.A. et al. Evolution of Electron Transport under Resistive Switching in Porphyrazine Films. Semiconductors 55, 296–300 (2021). https://doi.org/10.1134/S1063782621030052
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DOI: https://doi.org/10.1134/S1063782621030052