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Silicon Nanowire Parameter Extraction Using DFT and Comparative Performance Analysis of SiNWFET and CNTFET Devices

  • PHYSICS OF SEMICONDUCTOR DEVICES
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Abstract

The performance and scalability of silicon nanowire field-effect transistor (SiNWFET) and carbon nanotube field-effect transistor (CNTFET) with surround gate geometry were studied using such tools as material exploration and design analysis (MedeA) and device modeling and simulation SilvacoTCAD. The SiNWFET and CNTFET with gate-all-around (GAA) structure offer good gate electrostatic control, high On-current and better suppression of short-channel effects with complete encirclement of the device channel. Rather than using the bulk properties of silicon, estimation of properties silicon nanowire (SiNW) was made using MedeA VASP tool based on density functional theory (DFT). In this study, the device input (ID–VGS) and output (ID–VDS) have been analyzed and parameters like threshold voltage, IOn/IOff ratio, drain induced barrier lowering and sub-threshold slope extracted, and comparison is made between SiNWFET and CNTFET devices. The results point towards the DFT-based material parameter estimation to incorporate the quantum effects and use of SiNW/CNT-based GAA structure below 10 nm to meet scaling targets. The results suggest that the SiNWFET and CNTFET device with GAA geometry could be a better alternative to conventional MOSFETs and FinFET for numerous high-performance and low-power device applications.

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ACKNOWLEDGMENTS

This research has been done at VLSI Design and Nano Material Research (NMR) Labs, Department of Electronic Science, Kurukshetra University Haryana-136119 (India). One of the authors (Bhoop Singh) is thankful to World Bank TEQIP-III and NPIU-India for research fellowship.

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Authors and Affiliations

  1. Department of Electronic Science, Kurukshetra University, 136119, Kurukshetra, India

    B. Singh & B. Prasad

  2. J.C. Bose University of Science and Technology, YMCA, 121006, Faridabad, India

    D. Kumar

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  1. B. Singh
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Correspondence to B. Singh.

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Singh, B., Prasad, B. & Kumar, D. Silicon Nanowire Parameter Extraction Using DFT and Comparative Performance Analysis of SiNWFET and CNTFET Devices. Semiconductors 55, 100–107 (2021). https://doi.org/10.1134/S1063782621010152

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