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Arsenic Doping Upon the Deposition of CdTe Layers from Dimethylcadmium and Diisopropyltellurium

  • ELECTRONIC PROPERTIES OF SEMICONDUCTORS
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Abstract

The incorporation and activation of arsenic from tris(dimethylamino)arsine in CdTe layers grown by metal-organic chemical vapor deposition from dimethylcadmium and diisopropyltellurium on GaAs substrates are investigated. The incorporation of arsenic into CdTe depends on the crystallographic orientation of the layers and increases in the series (111)B → (100) → (310). The arsenic concentration in the CdTe layers is proportional to the tris(dimethylamino)arsine flow rate at a power of 1.4 and increases with decreasing diisopropyltellurium/dimethylcadmium ratio from 1.4 to 0.5. After deposition, the CdTe:As layers have p-type conductivity with an arsenic concentration of 1 × 1017–7 × 1018 cm–3 and a hole concentration of 2.7 × 1014–4.6 × 1015 cm–3, respectively; the fraction of electrically active arsenic does not exceed ~0.3%. After annealing in argon (250–450°C), the highest hole concentration is 1 × 1017 cm–3, and the arsenic activation efficiency is ~4.5%. The ionization energy of arsenic determined from the temperature dependence of the hole concentration is in the range of 98–124 meV. The low-temperature photoluminescence spectra of the layers have an emission peak with an energy of ~1.51 eV, which can be attributed to donor–acceptor recombination, where AsTe is an acceptor with an ionization energy of ~90 meV.

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REFERENCES

  1. M. A. Green, E. D. Dunlop, D. H. Levi, J. Hohl-Ebinger, M. Yoshita, and A. W. Y. Ho-Baillie, Progr. Photovolt.: Res. Appl. 27, 565 (2019).

    Article  Google Scholar 

  2. Kanevce, M. O. Reese, T. M. Barnes, S. A. Jensen, and W. K. Metzger, J. Appl. Phys. 121, 214506 (2017).

    Article  ADS  Google Scholar 

  3. E. Molva, K. Saminadayar, and J. L. Pautrat, Solid State Commun. 48, 955 (1983).

    Article  ADS  Google Scholar 

  4. M. Soltani, M. Certier, R. Evrard, and E. Kartheuser, J. Appl. Phys. 78, 5626 (1995).

    Article  ADS  Google Scholar 

  5. J. M. Arias, S. H. Shin, D. E. Cooper, M. Zandian, J. G. Pasko, E. R. Gertner, R. E. DeWames, and J. Singh, J. Vac. Sci. Technol. A 8, 1025 (1990).

    Article  ADS  Google Scholar 

  6. V. S. Evstigneev, A. V. Chilyasov, A. N. Moiseev, and M. V. Kostunin, Thin Solid Films 689, 137514 (2019).

    Article  ADS  Google Scholar 

  7. E. S. Nikonyuk, Z. I. Zakharuk, V. L. Shlyakhovy, P. M. Fochuk, and A. I. Rarenko, Semiconductors 35, 405 (2001).

    Article  ADS  Google Scholar 

  8. D. J. Chadi and C. H. Park, Mater. Sci. Forum 196, 285 (1995).

    Article  Google Scholar 

  9. S. H. Wei and S. B. Zhang, Phys. Rev. B 66, 155211 (2002).

    Article  ADS  Google Scholar 

  10. L. Svob, I. Cheze, A. Lusson, D. Ballutaud, J. F. Rommeluere, and Y. Marfaing, J. Cryst. Growth 184, 459 (1998).

    Article  ADS  Google Scholar 

  11. P. Y. Su, R. Dahal, G. C. Wang, S. Zhang, T. M. Lu, and I. B. Bhat, J. Electron. Mater. 44, 3118 (2015).

    Article  ADS  Google Scholar 

  12. M. Ekawa, K. Yasuda, T. Ferid, and M. Saji, J. Appl. Phys. 71, 2669 (1992).

    Article  ADS  Google Scholar 

  13. A. V. Chilyasov, A. N. Moiseev, V. S. Evstigneev, B. S. Stepanov, and M. N. Drozdov, Inorg. Mater. 52, 1210 (2016).

    Article  Google Scholar 

  14. V. S. Evstigneev, A. V. Chilyasov, A. N. Moiseev, and M. V. Kostyunin, Inorg. Mater. 55, 984 (2019).

    Article  Google Scholar 

  15. G. Kartopu, O. Oklobia, D. Turkay, D. R. Diercks, B. P. Gorman, V. Barrioz, S. Campbell, J. D. Major, M. K. Al Turkestani, S. Yerci, T. M. Barnes, N. S. Beattie, G. Zoppi, S. Jones, and S. J. C. Irvine, Sol. Energy Mater. Sol. Cells 194, 259 (2019).

    Article  Google Scholar 

  16. P. Y. Su, C. Lee, G. C. Wang, T. M. Lu, and I. B. Bhat, J. Electron. Mater. 43, 2895 (2014).

    Article  ADS  Google Scholar 

  17. S. Salim, C. K. Lim, and K. F. Jensen, Chem. Mater. 7, 507 (1995).

    Article  Google Scholar 

  18. M. V. Yakushev, D. V. Brunev, and Yu. G. Sidorov, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 4, 64 (2010).

    Article  Google Scholar 

  19. T. Ablekim, S. K. Swain, W. J. Yin, K. Zaunbrecher, J. Burst, T. M. Barnes, D. Kuciauskas, S. H. Wei, and K. G. Lynn, Sci. Rep. 7, 4563 (2017).

    Article  ADS  Google Scholar 

  20. B. E. McCandless, W. A. Buchanan, C. P. Thompson, G. Sriramagiri, R. J. Lovelett, J. Duenow, D. Albin, S. Jensen, E. Colegrove, J. Moseley, H. Moutinho, S. Harvey, M. Al-Jassim, and W. K. Metzger, Sci. Rep. 8, 1 (2018).

    Article  Google Scholar 

  21. S. K. Ghandhi, N. R. Taskar, and I. B. Bhat, Appl. Phys. Lett. 50, 900 (1987).

    Article  ADS  Google Scholar 

  22. L. Svob, Y. Marfaing, B. Clerjaud, D. Côte, A. Lebkiri, and R. Druilhe, J. Cryst. Growth 159, 72 (1996).

    Article  ADS  Google Scholar 

  23. W. Scott, E. L. Stelzer, and R. J. Hager, J. Appl. Phys. 47, 1408 (1976).

    Article  ADS  Google Scholar 

  24. G. L. Burton, D. R. Diercks, O. S. Ogedengbe, P. A. R. D. Jayathilaka, M. Edirisooriya, T. H. Myers, K. N. Zaunbrecher, J. Moseley, T. M. Barnes, and B. P. Gorman, Sol. Energy Mater. Sol. Cells 182, 68 (2018).

    Article  Google Scholar 

  25. J. R. Haynes, Phys. Rev. Lett. 4, 361 (1960).

    Article  ADS  Google Scholar 

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ACKNOWLEDGMENTS

Analysis of the structures by the SIMS method was carried out using equipment of the Center for Collective Use “Diagnostics of microstructures and nanostructures” of Yaroslavl State University.

Funding

The study was fulfilled on the state order of the Ministry of Science and Education of the Russian Federation (topic no. 0095-2019-0004) and partially supported by the Russian Scientific Foundation (project no. 17-12-01360).

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Authors and Affiliations

  1. Devyatykh Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences, 603951, Nizhny Novgorod, Russia

    V. S. Evstigneev, A. V. Chilyasov & A. N. Moiseev

  2. Institute for Physics of Microstructures, Russian Academy of Sciences, 603950, Nizhny Novgorod, Russia

    S. V. Morozov & D. I. Kuritsyn

Authors
  1. V. S. Evstigneev
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  2. A. V. Chilyasov
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  3. A. N. Moiseev
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  4. S. V. Morozov
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  5. D. I. Kuritsyn
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Correspondence to V. S. Evstigneev.

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Translated by V. Bukhanov

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Evstigneev, V.S., Chilyasov, A.V., Moiseev, A.N. et al. Arsenic Doping Upon the Deposition of CdTe Layers from Dimethylcadmium and Diisopropyltellurium. Semiconductors 55, 7–13 (2021). https://doi.org/10.1134/S1063782621010061

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  • DOI: https://doi.org/10.1134/S1063782621010061

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