Abstract
In this work, the blade-type field emission cathodes (BFECs) of original construction have been developed and produced. As the basis of the cathodes the (110)-cut silicon wafers were used. On the upper surface of Si substrate the parallel grooves of the 20 μm width and 50 μm depth of 1.7 mm in length were etched in a concentrated aqueous 44% KOH solution. As a result the parallel Si walls of the rectangular shape were created, which after imparting them a wedge shape form were used as a pedestals for supporting of emitting graphite blades, obtained by the electron beam evaporation of graphite. The blades were sharpened to the thickness not exceeding 10 nm. It was shown that our BFECs can operate at field emission current up to 6 mA, depending on the sharpness of a blade. It was found that the cathodes, which had previously worked on low currents, then showed high limiting currents, in comparison with the cathodes, which were initially forced to work on extreme emission currents.
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Kashko, I.A., Filippov, V.V., Labunov, V.A. et al. Graphite-Based Blade-Type Field Emission Cathodes. Semiconductors 54, 1826–1829 (2020). https://doi.org/10.1134/S1063782620140122
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DOI: https://doi.org/10.1134/S1063782620140122