Abstract
The results of studies of the spectral and kinetic characteristics of the photoluminescence of photonic crystals formed on the basis of structures with self-assembled Ge(Si) nanoislands are reported. The experimentally observed enhancement of the photoluminescence-signal intensity of the nanoislands in the spectral range 1.1–1.6 μm due to interaction with the radiative modes of photonic crystals in the vicinity of the Γ point of the Brillouin zone and the effect of such interaction on the probability of radiative recombination in Ge(Si) nanoislands are considered.
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ACKNOWLEDGMENTS
The PhCs based on silicon structures with Ge(Si) nanoislands were fabricated with the use of equipment of the Multiple-Access Center “Physics and Technology of Microstructures and Nanostructures”, Institute for Physics of Microstructures, Russian Academy of Sciences.
We thank D.E. Utkin (Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences) for conducting electron-beam lithography.
Funding
The study was supported by the Russian Foundation for Basic Research, project no. 18-42-520047_r, and the Presidium of the Russian Academy of Sciences, program of fundamental research no. 13.
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Translated by E. Smorgonskaya
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Yablonskiy, A.N., Novikov, A.V., Stepikhova, M.V. et al. Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals. Semiconductors 54, 1352–1359 (2020). https://doi.org/10.1134/S1063782620100334
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DOI: https://doi.org/10.1134/S1063782620100334