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Growth of ZnO Nanostructures by Wet Oxidation of Zn Thin Film Deposited on Heat-Resistant Flexible Substrates at Low Temperature

  • SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
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Abstract

Coral-like ZnO nanostructures were successfully grown onto heat-resistant flexible substrates by the oxidation of Zn thin films. At a relatively low temperature (100°C), Zn thin film was oxidized using a horizontal furnace under the flow of water vapour. The obtained results revealed well-defined aggregates of ZnO nanostructures grown on the flexible films. XRD patterns exhibited a strong and sharp diffraction along the (002) plane suggesting a well-crystallized ZnO phase. Field emission scanning electron microscopy observations showed high-density ZnO nanostructures aggregated in coral-like shape. The present study introduced a cost-effective and simple approach to grow high-quality ZnO nanostructures with controlled shape and size, offering a promising candidate for nano-based devices such as fast-response photodiodes and gas sensors.

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Authors and Affiliations

  1. Physics Department, Faculty of Sciences, Al-Asmarya Islamic University, Zliten, Libya

    O. F. Farhat

  2. Physics Department, Faculty of Education, Tishk International University (TIU), Erbil, KRG, Iraq

    M. Hisham

  3. Department of Physics, College of Science, University of Bahrain, 32038, Manama, Kingdom of Bahrain

    M. Bououdina

  4. Department of Medical Imaging, Faculty of Applied Medical Sciences, The Hashemite University, Zarqa, Jordan

    Ammar A. Oglat

  5. Department of Pathological analysis, College of Science, University of Knowledge, Erbil, KRG, Iraq

    Nyan J. Mohammed

Authors
  1. O. F. Farhat
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  2. M. Hisham
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  3. M. Bououdina
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  4. Ammar A. Oglat
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  5. Nyan J. Mohammed
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Correspondence to O. F. Farhat.

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Farhat, O.F., Hisham, M., Bououdina, M. et al. Growth of ZnO Nanostructures by Wet Oxidation of Zn Thin Film Deposited on Heat-Resistant Flexible Substrates at Low Temperature. Semiconductors 54, 1220–1223 (2020). https://doi.org/10.1134/S1063782620100103

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  • DOI: https://doi.org/10.1134/S1063782620100103

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