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Formation of Carbon Layers by the Thermal Decomposition of Carbon Tetrachloride in a Reactor for MOCVD Epitaxy

  • XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020
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Abstract

A new method for depositing carbon films by the thermal decomposition of carbon tetrachloride (CCl4) in a hydrogen flux in a reactor for metal-organic chemical vapor deposition (MOCVD) at atmospheric pressure is developed. From the results obtained by Raman spectroscopy, it can be conceived that the carbon layers produced by this method are the disordered nanocrystalline graphite. It is shown that such carbon layers can be used in the technological cycle of the production of gallium-arsenide optoelectronic device structures (among them spin light-emitting diodes with a CoPt injector).

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Funding

The study was supported in part by the Russian Foundation for Basic Research, project no. 18-29-19137_mk. The part of the study concerned with the formation of SLED structures was supported by the Russian Science Foundation, project no. 17-79-20173.

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Authors and Affiliations

  1. Physical–Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia

    B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, P. B. Demina, A. V. Zdoroveyshchev, R. N. Kriukov & I. N. Antonov

  2. Institute for Physics of Microstructures, Russian Academy of Sciences, 603950, Nizhny Novgorod, Russia

    M. N. Drozdov

  3. Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia

    A. V. Nezhdanov & S. M. Plankina

  4. Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences (Fryazino Branch), 141190, Fryazino, Moscow region, Russia

    M. P. Temiryazeva

Authors
  1. B. N. Zvonkov
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  2. O. V. Vikhrova
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  3. Yu. A. Danilov
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  4. M. V. Dorokhin
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  5. P. B. Demina
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  6. M. N. Drozdov
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  7. A. V. Zdoroveyshchev
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  8. R. N. Kriukov
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  9. A. V. Nezhdanov
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  10. I. N. Antonov
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  11. S. M. Plankina
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  12. M. P. Temiryazeva
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Corresponding author

Correspondence to O. V. Vikhrova.

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The authors declare that they have no conflict of interest.

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Translated by E. Smorgonskaya

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Zvonkov, B.N., Vikhrova, O.V., Danilov, Y.A. et al. Formation of Carbon Layers by the Thermal Decomposition of Carbon Tetrachloride in a Reactor for MOCVD Epitaxy. Semiconductors 54, 956–960 (2020). https://doi.org/10.1134/S106378262008028X

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  • DOI: https://doi.org/10.1134/S106378262008028X

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