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Modeling the Spatial Switch-On Dynamics of a Laser Thyristor (λ = 905 nm) Based on an AlGaAs/InGaAs/GaAs Multi-Junction Heterostructure

  • PHYSICS OF SEMICONDUCTOR DEVICES
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Abstract

A 2D carrier transport model to be used in studying the spatial current dynamics in laser thyristors is presented. The model takes into account such features as optical feedback, impact ionization, and drift velocity saturation in strong electric fields. It is shown that there is current localization during laser-thyristor switch-on. A relationship is demonstrated between the distribution nonuniformity of the control current and its amplitude and position of the initial switch-on region. The time of laser-thyristor switch-on is 13 ns at a feed voltage of 26V, with a time of switch-on spreading over the entire 200-μm stripe width of ~65 ns. These parameters remain invariable irrespective of the switch-on spatial dynamics.

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Funding

The study was supported by a grant of the President of the Russian Federation for young candidates of science (MK-3208.2019.8).

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    O. S. Soboleva, V. S. Golovin, V. S. Yuferev, P. S. Gavrina, N. A. Pikhtin, S. O. Slipchenko & A. A. Podoskin

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  1. O. S. Soboleva
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  2. V. S. Golovin
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  3. V. S. Yuferev
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  4. P. S. Gavrina
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  5. N. A. Pikhtin
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  6. S. O. Slipchenko
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  7. A. A. Podoskin
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Corresponding author

Correspondence to A. A. Podoskin.

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Translated by M. Tagirdzhanov

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Soboleva, O.S., Golovin, V.S., Yuferev, V.S. et al. Modeling the Spatial Switch-On Dynamics of a Laser Thyristor (λ = 905 nm) Based on an AlGaAs/InGaAs/GaAs Multi-Junction Heterostructure. Semiconductors 54, 575–580 (2020). https://doi.org/10.1134/S1063782620050140

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  • DOI: https://doi.org/10.1134/S1063782620050140

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