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Effect of Temperature on the Morphology of Planar GaAs Nanowires (Simulation)

  • MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS
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Abstract

The self-catalyzed growth of planar GaAs nanowires is analyzed using the lattice kinetic Monte Carlo model. Vapor–liquid–solid nanowire growth on (111)A and (111)B substrates is investigated. The effect of temperature and the location of gallium droplets on the morphology and growth direction of planar GaAs nanowires is examined. The temperature range of the stable growth of planar GaAs nanowires on the GaAs(111)A surface is revealed. Special asymmetric arrangement of the droplets is shown to ensure unidirectional nanowire growth.

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Funding

This study was supported by the Russian Science Foundation, project no. 19-31-90023.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    A. A. Spirina & N. L. Shwartz

  2. Novosibirsk State Technical University, 630087, Novosibirsk, Russia

    N. L. Shwartz

Authors
  1. A. A. Spirina
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  2. N. L. Shwartz
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Correspondence to A. A. Spirina.

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The authors declare that they have no conflict of interest.

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Translated by E. Bondareva

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Spirina, A.A., Shwartz, N.L. Effect of Temperature on the Morphology of Planar GaAs Nanowires (Simulation). Semiconductors 54, 212–216 (2020). https://doi.org/10.1134/S1063782620020190

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  • DOI: https://doi.org/10.1134/S1063782620020190

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