Abstract
Interrelationship between the structure and optical properties of graphite-like semiconductor carbon nitride produced by the heat treatment of thiocarbamide in an oxygen-containing medium at temperatures in the range from 400°C to 625°C is established. It is found that the maximum of the photoluminescence band shifts from 417 to 494 nm and simultaneously broadens, as the temperature of synthesis is elevated to 625°C. This effect is attributed to doping with oxygen and to the formation of defects as a consequence of decomposition of the already synthesized material with increasing temperature.
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ACKNOWLEDGMENTS
We are grateful to D.V. Zhigulin for conducting the TEM analysis of samples and to S.M. Zavadskii for his help in analyzing the synthesized materials by the FTIR technique.
Funding
The study was supported by the government of the Republic of Belarus, state research programs “Convergence-2020”, order no. 3.05, and “Material Science and Technologies”, order 1.56, and by Ministry of Education of the Republic of Belarus, grant for persons working towards a PhD.
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Translated by E. Smorgonskaya
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Baglov, A.V., Chubenko, E.B., Hnitsko, A.A. et al. Structural and Photoluminescence Properties of Graphite-Like Carbon Nitride. Semiconductors 54, 228–232 (2020). https://doi.org/10.1134/S1063782620020049
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DOI: https://doi.org/10.1134/S1063782620020049