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Strong Coupling of Excitons in Hexagonal GaN Microcavities

  • PHYSICS OF SEMICONDUCTOR DEVICES
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Abstract

The GaN planar hexagonal microcavities are grown by the selective vapor-phase epitaxy technique. The spectra are measured by the low-temperature cathodoluminescence method using a scanning electron microscope. The obtained spectra show a huge Rabi splitting (~100 meV). Numerical simulation of the spatial distribution of the intensities of modes in a hexagonal cavity is carried out. Certain modes can have a high spatial localization leading to strong coupling with the exciton and huge Rabi splitting. The fraction of excitons in polariton modes, which correlates with the intensity of exciton radiation associated with these modes, is theoretically calculated for hexagonal-shaped microcavities. Thus, the form of the dependence of the radiation probability on the eigenfrequencies of the structure is obtained.

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Funding

The study was supported by the Russian Science Foundation, project no. 16-12-10503.

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Authors and Affiliations

  1. St. Petersburg Academic University, 194021, St. Petersburg, Russia

    A. V. Belonovskii, K. M. Morozov, E. I. Girshova & M. A. Kaliteevski

  2. ITMO University, 197101, St. Petersburg, Russia

    A. V. Belonovskii, I. V. Levitskii, K. M. Morozov, E. I. Girshova, K. A. Ivanov & M. A. Kaliteevski

  3. Ioffe Institute, 194021, St. Petersburg, Russia

    I. V. Levitskii, M. I. Mitrofanov, E. I. Girshova, S. N. Rodin, V. P. Evtikhiev & M. A. Kaliteevski

  4. Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-58183, Linköping, Sweden

    G. Pozina

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  1. A. V. Belonovskii
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  2. G. Pozina
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  3. I. V. Levitskii
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  4. K. M. Morozov
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  5. M. I. Mitrofanov
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  6. E. I. Girshova
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  7. K. A. Ivanov
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  8. S. N. Rodin
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  9. V. P. Evtikhiev
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  10. M. A. Kaliteevski
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Corresponding author

Correspondence to A. V. Belonovskii.

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The authors declare that they have no conflict of interest.

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Translated by V. Bukhanov

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Belonovskii, A.V., Pozina, G., Levitskii, I.V. et al. Strong Coupling of Excitons in Hexagonal GaN Microcavities. Semiconductors 54, 127–130 (2020). https://doi.org/10.1134/S1063782620010042

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  • DOI: https://doi.org/10.1134/S1063782620010042

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