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Anticorrelation between the Intensity of Stimulated Picosecond Emission in GaAs and the Characteristic Time of Charge-Carrier Cooling

  • ELECTRONIC PROPERTIES OF SEMICONDUCTORS
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Abstract

During the powerful picosecond optical pumping, intense stimulated picosecond emission arises in a thin GaAs layer. It is found that, first, the maximum emission intensity decreases as the diameter of the pump beam increases (while the pump energy density is fixed). Second, this dependence anticorrelates with the dependence of the characteristic relaxation time of the emission on the beam diameter. This time is related to the characteristic cooling time of charge carriers, which is slowed due to carrier heating by emission. This leads to the anticorrelation given in the title.

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Funding

This study was carried out in the framework of a state assignment.

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Authors and Affiliations

  1. Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 125009, Moscow, Russia

    N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev & A. N. Krivonosov

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  1. N. N. Ageeva
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  2. I. L. Bronevoi
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  3. D. N. Zabegaev
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  4. A. N. Krivonosov
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Correspondence to I. L. Bronevoi.

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The authors declare no conflict of interest.

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Translated by M. Skorikov

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Ageeva, N.N., Bronevoi, I.L., Zabegaev, D.N. et al. Anticorrelation between the Intensity of Stimulated Picosecond Emission in GaAs and the Characteristic Time of Charge-Carrier Cooling. Semiconductors 54, 22–27 (2020). https://doi.org/10.1134/S1063782620010029

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  • DOI: https://doi.org/10.1134/S1063782620010029

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