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Topological Electronic States on the Surface of a Strained Gapless Semiconductor

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Abstract

We develop the theory describing the topological electronic states on the surface of a gapless strained semiconductor arisen from the mixing of conduction and valence bands. It follows from the present theory that the strain-induced band gap in the Brillouin zone center of the semiconductor results in the surface electronic states with the Dirac linear dispersion characteristic for topologically protected states. The structure of these surface electronic states is studied analytically near their Dirac point within the formalism based on the Luttinger Hamiltonian. The results bring attention to the rich surface physics relevant for topological systems.

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Funding

The work was partially supported by Russian Foundation for Basic Research (project 17-02-00053), Rannis project 163082-051, Ministry of Science and High Education of Russian Federation (projects 3.8051.2017/8.9, 3.4573.2017/6.7, 3.2614.2017/4.6, 14.Y26.31.0015), and the Government of the Russian Federation through the ITMO Fellowship and Professorship Program.

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Authors and Affiliations

  1. Department of Applied and Theoretical Physics, Novosibirsk State Technical University, 630073, Novosibirsk, Russia

    O. V. Kibis

  2. NORDITA, KTH Royal Institute of Technology and Stockholm University, SE-106 91, Stockholm, Sweden

    O. Kyriienko

  3. ITMO University, 197101, St. Petersburg, Russia

    O. Kyriienko & I. A. Shelykh

  4. Science Institute, University of Iceland, IS-107, Reykjavik, Iceland

    I. A. Shelykh

Authors
  1. O. V. Kibis
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  2. O. Kyriienko
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  3. I. A. Shelykh
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Correspondence to O. V. Kibis.

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Kibis, O.V., Kyriienko, O. & Shelykh, I.A. Topological Electronic States on the Surface of a Strained Gapless Semiconductor. Semiconductors 53, 1867–1869 (2019). https://doi.org/10.1134/S1063782619140100

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  • DOI: https://doi.org/10.1134/S1063782619140100

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