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Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam

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Abstract

The effect of annealing temperature and time on the luminescence intensity of the InGaN/GaN heterostructure subjected to ion beam etching was studied. We show that annealing at a temperature of 1100°C makes it possible to eliminate the radiation defects in the GaN layers that arise in the etching process with a focused Ga+ ion beam (30 keV).

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Funding

In detail of ion-beam etching, this work was supported by the Ministry of Education and Science of the Russian Federation (project no. 3.3194.2017/4.6).

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    A. V. Sakharov, S. N. Rodin, W. V. Lundin, M. I. Mitrofanov, I. V. Levitskii, G. V. Voznyuk & V. P. Evtikhiev

  2. Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences, St. Petersburg, Russia

    S. O. Usov, A. F. Tsatsulnikov & I. V. Levitskii

  3. ITMO University, St. Petersburg, Russia

    G. V. Voznyuk & M. A. Kaliteevskii

Authors
  1. A. V. Sakharov
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  2. S. O. Usov
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  3. S. N. Rodin
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  4. W. V. Lundin
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  5. A. F. Tsatsulnikov
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  6. M. I. Mitrofanov
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  7. I. V. Levitskii
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  8. G. V. Voznyuk
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  9. M. A. Kaliteevskii
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  10. V. P. Evtikhiev
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Corresponding authors

Correspondence to A. V. Sakharov, S. O. Usov, S. N. Rodin, W. V. Lundin, A. F. Tsatsulnikov, M. I. Mitrofanov, I. V. Levitskii, G. V. Voznyuk, M. A. Kaliteevskii or V. P. Evtikhiev.

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Sakharov, A.V., Usov, S.O., Rodin, S.N. et al. Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam. Semiconductors 53, 2121–2124 (2019). https://doi.org/10.1134/S106378261912025X

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  • DOI: https://doi.org/10.1134/S106378261912025X

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