Abstract
Plasmonic enhancement of the photoluminescence in hybrid structures with SiGe quantum dots and Ag nanoislands was found. Ag nanoislands grown on the top of the multilayer structures with SiGe quantum dots (QDs) support a surface plasmon resonance that can be tuned to the QD emission wavelength by changing of Ag nanoparticle parameters. Photoluminescence measurements of the hybrid metal-semiconductor nanostructures revealed a fourfold increase of the integral intensity of SiGe QD emission in the spectral range from 0.8 to 1 eV.
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ACKNOWLEDGMENTS
Authors are much obliged to V.A. Armbrister for growth of Ge/Si QD structures, S.Yu. Chepkasov for assistance in differential reflectance spectroscopy measurements. The research was carried out within the State assignment of FASO of Russia (no. 0306-2018-0008) in the part of structure growth, and funded by RFBR (grants 16-29-14031, 18-52-00014) and Belarusian Republican Foundation for Fundamental Research (grant F18R-038) in the part of surface structure and optical property studies.
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Zinovyev, V.A., Zinovieva, A.F., Katsuba, A.V. et al. Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands. Semiconductors 52, 2149–2152 (2018). https://doi.org/10.1134/S1063782618160406
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DOI: https://doi.org/10.1134/S1063782618160406