Abstract
Two different approaches for the etching of the gallium nitride epitaxial layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy have been elaborated. It is demonstrated that anisotropic etch profiles can be achieved by both photoenhanced wet chemical etching and reactive plasma-chemical etching methods. Moreover, it is shown, that the photoenhanced wet chemical etching allows to remove GaN layer without damaging silicon substrate.
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ACKNOWLEDGMENTS
This work is partially supported by the grant of the Ministry of Education and Science of the Russian Federation no. 16.9789.2017/BCh and Skoltech (agreement no. 3663-MRA).
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Shubina, K.Y., Berezovskaya, T.N., Mokhov, D.V. et al. Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications. Semiconductors 52, 2117–2119 (2018). https://doi.org/10.1134/S1063782618160297
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DOI: https://doi.org/10.1134/S1063782618160297