Abstract
It is demonstrated theoretically that the interaction of gapped 2D materials (gapped graphene and transition metal dichalchogenide monolayers) with a strong high-frequency electromagnetic field (dressing field) crucially changes the band structure of the materials. As a consequence, the renormalized band structure of the materials drastically depends on the field polarization. Particularly, a linearly polarized dressing field always decreases band gaps, whereas a circularly polarized field breaks the equivalence of band valleys in different points of the Brillouin zone and can both increase and decrease corresponding band gaps. It is shown also that a dressing field can turn both the band gaps and the spin splitting of the bands into zero. As a result, the dressing field can serve as an effective tool to control spin and valley properties of the materials in various optoelectronic applications.
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Kibis, O.V., Dini, K., Iorsh, I.V. et al. Floquet Engineering of Gapped 2D Materials. Semiconductors 52, 523–525 (2018). https://doi.org/10.1134/S1063782618040176
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DOI: https://doi.org/10.1134/S1063782618040176