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Optimal Doping of Diode Current Interrupters

  • Physics of Semiconductor Devices
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Abstract

An analytical solution to the problem of a decrease in energy losses Ω in diode current interrupters is derived for the stage of recovery of the blocking ability due to optimization of the dopant distribution N(x) over the structure thickness. The distribution N(x) close to optimal is found; it makes it possible to decrease Ω by 30–55% compared with standard design interrupters with homogeneously doped high-resistivity layers.

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Authors and Affiliations

  1. All-Russia Electrical Engineering Institute, Moscow, 111250, Russia

    A. S. Kyuregyan

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  1. A. S. Kyuregyan
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Correspondence to A. S. Kyuregyan.

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Original Russian Text © A.S. Kyuregyan, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 3, pp. 359–365.

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Kyuregyan, A.S. Optimal Doping of Diode Current Interrupters. Semiconductors 52, 341–347 (2018). https://doi.org/10.1134/S1063782618030144

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  • DOI: https://doi.org/10.1134/S1063782618030144

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