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Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE

  • Physics of Semiconductor Devices
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Abstract

Laser-power converters for the wavelength λ = 808 nm are fabricated by liquid-phase epitaxy (LPE) on the basis of n-Al0.07GaAs–p-Al0.07GaAs–p-Al0.25GaAs single-junction heterostructures. The converters are tested with uniform (pulse simulator) and partly nonuniform (laser beam) illumination distribution over the photoreceiving surface. In the former case, a monochromatic efficiency of η = 53.1% is achieved for samples with an area of S = 4 cm2 at a power of 1.2 W. At S = 10.2 mm2 the efficiency is 58.3% at a laser power of 0.7 W.

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Authors and Affiliations

  1. Ioffe Institute, St. Petersburg, 194021, Russia

    V. P. Khvostikov, S. V. Sorokina, N. S. Potapovich, O. A. Khvostikova, N. Kh. Timoshina & M. Z. Shvarts

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  1. V. P. Khvostikov
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  2. S. V. Sorokina
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  3. N. S. Potapovich
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  4. O. A. Khvostikova
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  5. N. Kh. Timoshina
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  6. M. Z. Shvarts
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Corresponding author

Correspondence to V. P. Khvostikov.

Additional information

Original Russian Text © V.P. Khvostikov, S.V. Sorokina, N.S. Potapovich, O.A. Khvostikova, N.Kh. Timoshina, M.Z. Shvarts, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 3, pp. 385–389.

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Khvostikov, V.P., Sorokina, S.V., Potapovich, N.S. et al. Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE. Semiconductors 52, 366–370 (2018). https://doi.org/10.1134/S1063782618030120

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  • DOI: https://doi.org/10.1134/S1063782618030120

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