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Use of the Atomic Structure of Silicon Crystals to Obtain Multi-Tip Field-Emission Sources of Electrons

  • Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
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Abstract

The field-emission properties of field electron sources produced using the atomic structure of silicon crystals, the heterophase vacuum-plasma self-organization of island carbon coatings, and highly anisotropic plasma-chemical etching under weak-adsorption conditions are studied. A correlation between the morphological and field-emission characteristics of field cathode microstructures on silicon crystals with various conductivity types is ascertained. The results of experimental studies are interpreted using the Fowler–Nordheim theory in conjunction with changes in the compositions of the surface phases formed in fabricating emitting silicon projections.

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Authors and Affiliations

  1. Saratov Branch, Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Saratov, 410019, Russia

    R. K. Yafarov

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  1. R. K. Yafarov
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Correspondence to R. K. Yafarov.

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Original Russian Text © R.K. Yafarov, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 2, pp. 147–153.

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Yafarov, R.K. Use of the Atomic Structure of Silicon Crystals to Obtain Multi-Tip Field-Emission Sources of Electrons. Semiconductors 52, 137–142 (2018). https://doi.org/10.1134/S1063782618020239

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  • DOI: https://doi.org/10.1134/S1063782618020239

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