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Luminescence Properties of Cd x Zn1 – xO Thin Films

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Abstract

Thin Cd x Zn1 – xO films with a Cd content in the range from zero to 35 at % are synthesized by pulsed laser deposition. A record-breaking solubility limit of 30 at % of Cd in wurtzite-structured Cd x Zn1 – xO thin films is attained. Apart from the exciton peak, additional peaks associated with an inhomogeneous distribution of Cd in the samples are observed in the low-temperature (10 K) photoluminescence spectra of Cd0.15Zn0.85O and Cd0.3Zn0.7O films. An unsteady (S-like) temperature dependence of the spectral position of the exciton photoluminescence peak in Cd x Zn1 – xO films is observed. Such a dependence is associated with the effect of the localization of charge carriers.

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Correspondence to A. A. Lotin.

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Original Russian Text © A.A. Lotin, O.A. Novodvorsky, L.S. Parshina, O.D. Khramova, E.A. Cherebylo, V.A. Mikhalevsky, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 2, pp. 272–275.

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Lotin, A.A., Novodvorsky, O.A., Parshina, L.S. et al. Luminescence Properties of Cd x Zn1 – xO Thin Films. Semiconductors 52, 260–263 (2018). https://doi.org/10.1134/S1063782618020069

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  • DOI: https://doi.org/10.1134/S1063782618020069

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