Abstract
The values of the thermoelectric power, layer resistivity and thermal conductivity of a Mn x Si1–x nanoscale layer and Mn x Si1–x/Si superlattice on silicon depending on the growth temperature in the range T = 300–600 K are found experimentally. The contribution of the nanoscale film and substrate to the thermoelectric effect is discussed. The thermoelectric figure of merit of a single manganese-ssilicide layer, superlattice, and layer/substrate system is estimated. The largest figure of merit ZT = 0.59 ± 0.06 is found for Mn0.2Si0.8 at T = 600 K.
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Original Russian Text © I.V. Erofeeva, M.V. Dorokhin, V.P. Lesnikov, Yu.M. Kuznetsov, A.V. Zdoroveyshchev, E.A. Pitirimova, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 11, pp. 1456–1461.
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Erofeeva, I.V., Dorokhin, M.V., Lesnikov, V.P. et al. Thermoelectric effects in nanoscale layers of manganese silicide. Semiconductors 51, 1403–1408 (2017). https://doi.org/10.1134/S1063782617110112
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DOI: https://doi.org/10.1134/S1063782617110112