Abstract
The times of the cascade capture of electrons at a donor–acceptor charged dipole for the case of the pulsed and steady-state excitation of impurity photoconductivity in GaAs, Ge, and Si are calculated. It is shown that the dependence of the frequency of the cascade capture on the concentration of the charged impurity becomes sublinear in semiconductors under consideration at a concentration of the charged impurity higher than 1013 cm–3.
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Original Russian Text © V.Ya. Aleshkin, L.V. Gavrilenko, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 11, pp. 1498–1502.
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Aleshkin, V.Y., Gavrilenko, L.V. On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors. Semiconductors 51, 1444–1448 (2017). https://doi.org/10.1134/S1063782617110069
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DOI: https://doi.org/10.1134/S1063782617110069