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Strained multilayer structures with pseudomorphic GeSiSn layers

  • XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
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Abstract

The temperature and composition dependences of the critical thickness of the 2D–3D transition for a GeSiSn film on Si(100) have been studied. The regularities of the formation of multilayer structures with pseudomorphic GeSiSn layers directly on a Si substrate, without relaxed buffer layers, were investigated for the first time. The possibility of forming multilayer structures based on pseudomorphic GeSiSn layers has been shown and the lattice parameters have been determined using transmission electron microscopy. The grown structures demonstrate photoluminescence for Sn contents from 3.5 to 5% in GeSiSn layers.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    V. A. Timofeev, A. I. Nikiforov, A. R. Tuktamyshev, M. Yu. Yesin, V. I. Mashanov & A. K. Gutakovskii

  2. National Research Tomsk Polytechnic University, Tomsk, 634050, Russia

    A. I. Nikiforov

  3. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 607680, Russia

    N. A. Baidakova

Authors
  1. V. A. Timofeev
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  2. A. I. Nikiforov
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  3. A. R. Tuktamyshev
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  4. M. Yu. Yesin
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  5. V. I. Mashanov
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  6. A. K. Gutakovskii
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  7. N. A. Baidakova
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Corresponding author

Correspondence to V. A. Timofeev.

Additional information

Original Russian Text © V.A. Timofeev, A.I. Nikiforov, A.R. Tuktamyshev, M.Yu. Yesin, V.I. Mashanov, A.K. Gutakovskii, N.A. Baidakova, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 12, pp. 1610–1614.

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Timofeev, V.A., Nikiforov, A.I., Tuktamyshev, A.R. et al. Strained multilayer structures with pseudomorphic GeSiSn layers. Semiconductors 50, 1584–1588 (2016). https://doi.org/10.1134/S106378261612023X

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  • DOI: https://doi.org/10.1134/S106378261612023X

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