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Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact

  • Physics of Semiconductor Devices
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Abstract

We report the fabrication and optical and electrical characterization of photodetectors for the UV spectral range based on single p–n junction nanowires with a transparent contact of a new type. The contact is based on CVD-grown (chemical-vapor deposition) graphene. The active region of the nitride nanowires contains a set of 30 radial In0.18Ga0.82N/GaN quantum wells. The structure is grown by metal-organic vaporphase epitaxy. The photodetectors are fabricated using electron-beam lithography. The current–voltage characteristics exhibit a rectifying behavior. The spectral sensitivity of the photodetector is recorded starting from 3 eV and extending far in the UV range. The maximal photoresponse is observed at a wavelength of 367 nm (sensitivity 1.9 mA/W). The response switching time of the photodetector is less than 0.1 s.

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Authors and Affiliations

  1. Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. V. Babichev

  2. ITMO University, St. Petersburg, 197101, Russia

    A. V. Babichev & A. Yu. Egorov

  3. St. Petersburg Academic University, 194021, Russia

    A. V. Babichev

  4. Institut d’Electronique Fondamentale, UMR 8622 CNRS, University Paris Saclay, 91405, Orsay Cedex, France

    H. Zhang, N. Guan, F. H. Julien, A. Messanvi & M. Tchernycheva

  5. University Grenoble Alpes, 38000, Grenoble, France

    A. Messanvi, C. Durand & J. Eymery

  6. CEA, INAC-SP2M, Nanophysique et Semiconducteurs Group, 38000, Grenoble, France

    A. Messanvi, C. Durand & J. Eymery

Authors
  1. A. V. Babichev
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  2. H. Zhang
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  3. N. Guan
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  4. A. Yu. Egorov
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  5. F. H. Julien
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  6. A. Messanvi
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  7. C. Durand
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  8. J. Eymery
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  9. M. Tchernycheva
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Corresponding author

Correspondence to A. V. Babichev.

Additional information

Original Russian Text © A.V. Babichev, H. Zhang, N. Guan, A.Yu. Egorov, F.H. Julien, A. Messanvi, C. Durand, J. Eymery, M. Tchernycheva, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 8, pp. 1118–1122.

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Babichev, A.V., Zhang, H., Guan, N. et al. Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact. Semiconductors 50, 1097–1101 (2016). https://doi.org/10.1134/S106378261608008X

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  • DOI: https://doi.org/10.1134/S106378261608008X

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