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Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

The carrier recombination dynamics in an ensemble of GaN/AlN quantum dots is studied. The model proposed for describing this dynamics takes into account the transition of carriers between quantum dots and defects in a matrix. Comparison of the experimental and calculated photoluminescence decay curves shows that the interaction between quantum dots and defects slows down photoluminescence decay in the ensemble of GaN/AlN quantum dots.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russia

    I. A. Aleksandrov, V. G. Mansurov & K. S. Zhuravlev

  2. Novosibirsk State University, Novosibirsk, 630090, Russia

    K. S. Zhuravlev

Authors
  1. I. A. Aleksandrov
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  2. V. G. Mansurov
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  3. K. S. Zhuravlev
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Correspondence to I. A. Aleksandrov.

Additional information

Original Russian Text © I.A. Aleksandrov, V.G. Mansurov, K.S. Zhuravlev, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 8, pp. 1059–1063.

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Aleksandrov, I.A., Mansurov, V.G. & Zhuravlev, K.S. Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects. Semiconductors 50, 1038–1042 (2016). https://doi.org/10.1134/S1063782616080042

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  • DOI: https://doi.org/10.1134/S1063782616080042

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