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On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor

  • Surfaces, Interfaces, and Thin Films
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Abstract

The height of the (Au, Pd, Pt, Cu, Ag, Sn, In, Al, Mg, Ca, Li, Cs)/GaSe(0001) Schottky barrier as a function of the metal work function and the energy-band offsets in InSe(0001)/GaSe(0001) and GaSe(0001)/Si(111) heteropairs are analyzed within the context of the concept of the charge neutrality level, CNL vb(GaSe) = E v + 0.83 eV, with consideration for partial screening of the interface electrostatic dipole by metal- or semiconductor-induced tunneling states at the GaSe(0001) surface.

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References

  1. W. Schottky, Phys. Z. 41, 570 (1940).

    Google Scholar 

  2. J. Bardin, Phys. Rev. 71, 717 (1947).

    Article  ADS  Google Scholar 

  3. J. Tersoff, Phys. Rev. Lett. 53, 465 (1984).

    Article  ADS  Google Scholar 

  4. J. Robertson and B. Falabretti, J. Appl. Phys. 100, 014111 (2006).

    Article  ADS  Google Scholar 

  5. W. Monch, Appl. Surf. Sci. 92, 367 (1996).

    Article  ADS  Google Scholar 

  6. V. N. Brudnyi, A. V. Kosobutsky, and S. Yu. Sarkisov, Semiconductors 44, 1158 (2010).

    Article  ADS  Google Scholar 

  7. P. C. Leung, G. Andermana, W. G. Spitzer, and C. A. Mead, J. Phys. Chem. Sol. 27, 849 (1966).

    Article  ADS  Google Scholar 

  8. S. Kurtin, T. C. McGill, and C. A. Mead, Phys. Rev. B 3, 3368 (1971).

    Article  ADS  Google Scholar 

  9. G. J. Hughes, F. MacKinley, R. H. Williams, and I. T. McGovern, J. Phys. C: Solid State Phys. 15, L159 (1982).

    Article  ADS  Google Scholar 

  10. A. G. Kyazym-zade, A. O. Gubiev, and V. I. Tagirov, Sov. Phys. Semicond. 15, 102 (1981).

    Google Scholar 

  11. H. Raqqass, J.-P. Lacharme, C. A. Sebenne, M. Eddrief, and S. Le Thanh, Appl. Surf. Sci. 92, 357 (1996).

    Article  ADS  Google Scholar 

  12. Wen-Chang Hyang, Chia-Tsung Horng, Tu-Min Chen, Yu-Kuei Hsu, and Chen-Shiung Chang, Phys. Status Solidi C 5, 3405 (2008).

    Article  ADS  Google Scholar 

  13. Wen-Chang Hyang, Shui-Hsiang Su, Yu-Kuei Hsu, Chih-Chia Wang, and Chen-Shiung Chang, Superlatt. Microstruct. 40, 644 (2006).

    Article  ADS  Google Scholar 

  14. CRC Handbook of Chemistry and Physics, vers. 2008, p. 12.

  15. H. Reqqass, J.-P. Lachme, C. A. Sebenne, M. Eddrief, and V. L. Than, Appl. Phys. Lett. 92, 357 (1996).

    Google Scholar 

  16. O. Lang, A. Klein, C. Pettenkofer, and W. Jaegermann, J. Appl. Phys. 80, 3817 (1996).

    Article  ADS  Google Scholar 

  17. R. L. Anderson, Solid State Electron. 5, 341 (1962).

    Article  ADS  Google Scholar 

  18. W. Monch, Appl. Phys. Lett. 72, 1899 (1998).

    Article  ADS  Google Scholar 

  19. V. N. Brudnyi, S. N. Grinyaev, and V. E. Stepanov, Physica B 212, 429 (1995).

    Article  ADS  Google Scholar 

Download references

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Authors and Affiliations

  1. Tomsk State University, Tomsk, 634050, Russia

    V. N. Brudnyi & S. Yu. Sarkisov

  2. Kemerovo State University, Kemerovo, 650043, Russia

    A. V. Kosobutsky

Authors
  1. V. N. Brudnyi
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  2. S. Yu. Sarkisov
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  3. A. V. Kosobutsky
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Correspondence to V. N. Brudnyi.

Additional information

Original Russian Text © V.N. Brudnyi, S.Yu. Sarkisov, A.V. Kosobutsky, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 10, pp. 1351–1354.

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Brudnyi, V.N., Sarkisov, S.Y. & Kosobutsky, A.V. On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor. Semiconductors 49, 1307–1310 (2015). https://doi.org/10.1134/S1063782615100061

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  • DOI: https://doi.org/10.1134/S1063782615100061

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