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Characterization of field-emission cathodes based on graphene films on SiC

  • Physics of Semiconductor Devices
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Abstract

The properties of a point field-emission cathode representing a structure in the form of a silicon carbide tip coated with a thin graphene film are assessed. For the point cathode with the graphene coating, the current–voltage characteristics are constructed in the Fowler–Nordheim coordinates; the work functions φ of the point cathode are calculated by their slope. The possibility of forming heavily doped n +-SiC on the point surface by the sublimation of low-threshold field emission cathodes with low threshold electric fields and field-emission currents is shown.

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Authors and Affiliations

  1. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences, pr. Nauki 41, Kyiv, 03028, Ukraine

    R. V. Konakova & O. B. Okhrimenko

  2. Taganrog Institute of Technology, Southern Federal University, Taganrog, 347900, Russia

    A. M. Svetlichnyi, O. A. Ageev, E. Yu. Volkov, A. S. Kolomiytsev & I. L. Jityaev

  3. Southern Laser Technology Center, Taganrog, 347900, Russia

    O. B. Spiridonov

Authors
  1. R. V. Konakova
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  2. O. B. Okhrimenko
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  3. A. M. Svetlichnyi
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  4. O. A. Ageev
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  5. E. Yu. Volkov
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  6. A. S. Kolomiytsev
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  7. I. L. Jityaev
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  8. O. B. Spiridonov
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Corresponding author

Correspondence to O. B. Okhrimenko.

Additional information

Original Russian Text © R.V. Konakova, O.B. Okhrimenko, A.M. Svetlichnyi, O.A. Ageev, E.Yu. Volkov, A.S. Kolomiytsev, I.L. Jityaev, O.B. Spiridonov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 9, pp. 1278–1281.

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Konakova, R.V., Okhrimenko, O.B., Svetlichnyi, A.M. et al. Characterization of field-emission cathodes based on graphene films on SiC. Semiconductors 49, 1242–1245 (2015). https://doi.org/10.1134/S1063782615090146

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  • DOI: https://doi.org/10.1134/S1063782615090146

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