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On the band gap of Cu2ZnSn(S x Se1–x )4 alloys

  • Electronic Properties of Semiconductors
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Abstract

The transmittance spectra of single-crystal Cu2ZnSnS4 and Cu2ZnSnSe4 compounds and Cu2ZnSn(S x Se1–x )4 alloys grown by chemical vapor-transport reactions are studied in the region of the fundamental absorption edge. From the experimental spectra, the band gap of the compounds and their alloys is determined. The dependences of the band gap on the composition parameter x of the alloy are constructed. It is established that the band gap nonlinearly varies with x and can be described as a quadratic dependence.

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Authors and Affiliations

  1. Belarusian State University of Information and Radio Electronics, Minsk, 220013, Belarus

    I. V. Bodnar

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  1. I. V. Bodnar
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Correspondence to I. V. Bodnar.

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Original Russian Text © I.V. Bodnar, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 9, pp. 1180–1183.

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Bodnar, I.V. On the band gap of Cu2ZnSn(S x Se1–x )4 alloys. Semiconductors 49, 1145–1148 (2015). https://doi.org/10.1134/S1063782615090079

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  • DOI: https://doi.org/10.1134/S1063782615090079

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