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On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

Band offsets at the heterointerface are calculated for various combinations of InAlGaAs/AlGaAs heteropairs that can be synthesized on GaAs substrates in the layer-by-layer pseudomorphic growth mode. Patterns which make it possible to obtain an asymmetric barrier layer providing the almost obstruction-free transport of holes and the highest possible barrier height for electrons are found. The optimal compositions of both compounds (In0.232Al0.594Ga0.174As/Al0.355Ga0.645As) at which the flux of electrons across the barrier is at a minimum are determined with consideration for the critical thickness of the indium-containing quaternary solid solution.

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Authors and Affiliations

  1. St. Petersburg Academic University, Nanotechnology Research and Education Centre, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. E. Zhukov, F. I. Zubov, N. V. Kryzhanovskaya & M. V. Maximov

  2. St. Petersburg State Polytechnical University, St. Petersburg, 195251, Russia

    A. E. Zhukov, F. I. Zubov & M. V. Maximov

  3. Virginia Polytechnic Institute and State University, Blacksburg, Virginia, 24061, USA

    L. V. Asryan

  4. DTU Fotonik, Technical University of Denmark, Kgs. Lyngby, Lyngby, DK-2800, Denmark

    E. S. Semenova

  5. Ioffe Physical–Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    M. V. Maximov

Authors
  1. A. E. Zhukov
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  2. L. V. Asryan
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  3. E. S. Semenova
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  4. F. I. Zubov
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  5. N. V. Kryzhanovskaya
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  6. M. V. Maximov
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Correspondence to A. E. Zhukov.

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Original Russian Text © A.E. Zhukov, L.V. Asryan, E.S. Semenova, F.I. Zubov, N.V. Kryzhanovskaya, M.V. Maximov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 7, pp. 956–960.

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Zhukov, A.E., Asryan, L.V., Semenova, E.S. et al. On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates. Semiconductors 49, 935–938 (2015). https://doi.org/10.1134/S1063782615070258

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  • DOI: https://doi.org/10.1134/S1063782615070258

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