Abstract
The results of studying the optical properties of nanoscale single crystals of MoS2:Cl2 and WS2:Br2 semiconductor compounds are presented. In microscopic images obtained at the wavelength of the second (400 nm), edge effects are detected, which consist in enhancement or reduction in the second-harmonic signal intensity. Unlike previously proposed interference mechanisms of edge effects, non-interference mechanisms are considered. The occurrence of edge effects is associated with either an increased Cl2 and Br2 halogen molecule concentration or with an electrically induced second harmonic caused by band bending at the edges of individual crystal layers.
Similar content being viewed by others
References
H. S. Lee, S.-W. Min, Y.-G. Chang, M. K. Park, et al., Nano Lett. 12, 3695 (2012).
K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Phys. Rev. Lett. 105, 136805 (2010).
G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, Nano Lett. 11, 5111 (2011).
H. Wang, L. Yu, Y.-H. Lee, Y. Shi, A. Hsu, M. Chin, L.-J. Li, M. Dubey, J. Kong, and T. Palacios, Nano Lett. 12, 4674 (2012).
L. Kulyuk, D. Dumchenko, E. Bucher, K. Friemelt, O. Shenker, L. Charron, E. Fortin, and T. Dumouchel, Phys. Rev. B 72, 75336 (2005).
L. Kulyuk, L. Charon, and E. Fortin, Phys. Rev. B 68, 075314 (2003).
J. Chamings, S. Ahmed, S. J. Sweeney, V. A. Odnoblyudov, and C. W. Tu, Appl. Phys. Lett. 92, 021101 (2008).
H.-P. Komsa, J. Kotakoski, S. Kurasch, O. i Lehtinen, U. Kaiser, and A. V. Krasheninnikov, Phys. Rev. Lett. 109, 035503 (2012).
S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, and J. Wu, Sci. Rep. 3, 2657 (2013).
S. Anghel, Yu. Chumakov, V. Kravtsov, A. Mitioglu, P. Plochocka, K. Sushkevich, G. Volodina, A. Colev, and L. Kulyuk, arXiv:1411.3850v1[cond-mat. mtrl-sci].
N. Huo, S. Yang, Z. Wei, S.-S. Li, J.-B. Xia, and J. Li, Sci. Rep. 4, 5209 (2014).
R. Suzuki, M. Sakano, Y. J. Zhang, R. Akashi, D. Morikawa, A. Harasawa, K. Yaji, K. Kuroda, K. Miyamoto, T. Okuda, K. Ishizaka, R. Arita, and Y. Iwasa, Nature Nanotechnol. 9, 611 (2014).
S. Wu et al., Nature Phys. 9, 149 (2013).
A. M. van der Zande, P. Y. Huang, D. A. Chenet, T. C. Berkelbach, Yu. M. You, G.-H. Lee, T. F. Heinz, D. R. Reichman, D. A. Muller, and J. C. Hone, Nature Mater. 12, 554 (2013).
H. R. Gutiérrez, N. Perea-López, A. L. Elás, A. Berkdemir, B. Wang, R. Lv, F. López-Urias, V. H. Crespi, H. Terrones, and M. Terrones, Nano Lett. 13, 3447 (2013).
X. Yin et al., Science 344, 488 (2014).
Y. Li, S. Tongay, Q. Yue, J. Kang, J. Wu, and J. Li, J. Appl. Phys. 114, 174307 (2013).
W.-T. Hsu, Zi-Ang Zhao, L.-J. Li, C.-H. Chen, M.-H. Chiu, Pi-S. Chang, Yi-C. Chou, and W.-H. Chang, ASC Nano 8, 2951 (2014).
K. Novoselov, Science 306, 666 (2004).
D. M. D’Ambra, J. V. Marzik, R. Kershaw, J. Baglio, K. Dwight, and A. Wold, J. Solid State Chem. 57, 351 (1985).
A. Ubaldini, J. Jacimovic, N. Ubrig, and E. Giannini, Cryst. Growth Des. 13, 4453 (2013).
E. Mishina, N. Sherstyuk, S. Lavrov, A. Sigov, A. Mitioglu, S. Anghel, and L. Kulyuk, Appl. Phys. Lett. (in press).
A. Colev, C. Gherman, V. Mirovitskii, L. Kulyuk, and E. Fortin, J. Luminesc. 129, 1945 (2009).
O. A. Aktsipetrov, A. A. Fedyanin, E. D. Mishina, A. N. Rubtsov, C. W. VanHasselt, M. A. C. Devillers, and Th. Rasing, Surf. Sci. 1033, 352 (1996).
M. Lei, J. Price, and M. C. Downer, Appl. Phys. Lett. 96, 241105 (2010).
T. A. Germer, K. W. Kolasiński, J. C. Stephenson, and L. J. Richter, Phys. Rev. B 55, 10694 (1997).
S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981; Mir, Moscow, 1984).
A. Ayari, E. Cobas, O. Ogundadegbe, and M. S. Fuhrer, J. Appl. Phys. 101, 014507 (2007).
M. M. Ugeda, A. J. Bradley, Su-Fei Shi, F. H. da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S.-K. Mo, Z. Hussain, Z.-X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, Nature Mater. (2014). doi: 10.1038/NMAT4061
C. A. Koval and J. B. Olson, J. Electroanal. Chem. 234, 133 (1987).
Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, Nature Nanotechnol. 7, 699 (2012).
R. H. Friend and A. D. Yoffe, Adv. Phys. 36, 1 (1987).
Y. C. Lee, J. L. Shen, K. W. Chen, W. Z. Lee, S. Y. Hu, K. K. Tiong, and Y. S. Huang, J. Appl. Phys. 99, 63706 (2006).
Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y.-J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. Castro Neto, and K. S. Novoselov, Science 340, 1311 (2013).
H. Shi, R. Yan, S. Bertolazzi, J. Brivio, B. Gao, A. Kis, D. Jena, H. G. Xing, and L. Huang, ACS Nano 7, 1072 (2013).
D. Wickramaratne and F. Zahid, J. Chem. Phys. 140, 124710 (2014).
C. Zhang, A. Johnson, C.-L. Hsu, L.-J. Li, and C.-K. Shih, Nano Lett. 14, 2443 (2014).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © E.D. Mishina, N.E. Sherstyuk, A.P. Shestakova, S.D. Lavrov, S.V. Semin, A.S. Sigov, A. Mitioglu, S. Anghel, L. Kulyuk, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 6, pp. 810–816.
Rights and permissions
About this article
Cite this article
Mishina, E.D., Sherstyuk, N.E., Shestakova, A.P. et al. Edge effects in second-harmonic generation in nanoscale layers of transition-metal dichalcogenides. Semiconductors 49, 791–796 (2015). https://doi.org/10.1134/S1063782615060159
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782615060159