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Influence of the spatial arrangement of the Si δ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures

  • XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014
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Abstract

The photosensitivity, photoluminescence, and electroluminescence spectra of InGaAs/GaAs diode nanoheterostructures with a Si δ layer formed at a distance of 10 nm from the InGaAs quantum well are studied. The influence of the arrangement of the δ layer with respect to the quantum well on the optoelectronic properties of the structures is established.

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Authors and Affiliations

  1. Lobachevsky State University of Nizhny Novgorod, Nizhni Novgorod, 603950, Russia

    N. S. Volkova, A. P. Gorshkov, S. V. Tikhov, S. V. Khazanova & V. E. Degtyarev

  2. Physical Technical Research Institute, Nizhni Novgorod State University, Nizhni Novgorod, 603950, Russia

    N. V. Baidus & D. O. Filatov

Authors
  1. N. S. Volkova
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  2. A. P. Gorshkov
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  3. S. V. Tikhov
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  4. N. V. Baidus
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  5. S. V. Khazanova
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  6. V. E. Degtyarev
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  7. D. O. Filatov
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Corresponding author

Correspondence to N. S. Volkova.

Additional information

Original Russian Text © N.S. Volkova, A.P. Gorshkov, S.V. Tikhov, N.V. Baidus, S.V. Khazanova, V.E. Degtyarev, D.O. Filatov, 2015, published in Fizika i Tekhnika Poluprovod-nikov, 2015, Vol. 49, No. 2, pp. 145–148.

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Volkova, N.S., Gorshkov, A.P., Tikhov, S.V. et al. Influence of the spatial arrangement of the Si δ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures. Semiconductors 49, 139–142 (2015). https://doi.org/10.1134/S1063782615020232

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  • DOI: https://doi.org/10.1134/S1063782615020232

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