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Energy spectrum and transport in narrow HgTe quantum wells

  • XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014
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Abstract

The results of an experimental study of the transport phenomena and the hole energy spectrum of two-dimensional systems in the quantum well of HgTe zero-gap semiconductor with normal arrangement of quantum-confinement subbands are presented. An analysis of the experimental data allows us to reconstruct the carrier energy spectrum near the hole subband extrema. The results are interpreted using the standard kP model.

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Authors and Affiliations

  1. Institute of Natural Sciences, Ural Federal University, pr. Lenina 51, Ekaterinburg, 620000, Russia

    A. V. Germanenko & O. E. Rut

  2. Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. S. Kovalevskoi 18, Yekaterinburg, 620990, Russia

    G. M. Minkov & A. A. Sherstobitov

  3. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090, Russia

    S. A. Dvoretsky & N. N. Mikhailov

Authors
  1. A. V. Germanenko
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  2. G. M. Minkov
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  3. O. E. Rut
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  4. A. A. Sherstobitov
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  5. S. A. Dvoretsky
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  6. N. N. Mikhailov
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Corresponding author

Correspondence to A. V. Germanenko.

Additional information

Original Russian Text © A.V. Germanenko, G.M. Minkov, O.E. Rut, A.A. Sherstobitov, S.A. Dvoretsky, N.N. Mikhailov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 1, pp. 41–46.

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Germanenko, A.V., Minkov, G.M., Rut, O.E. et al. Energy spectrum and transport in narrow HgTe quantum wells. Semiconductors 49, 39–43 (2015). https://doi.org/10.1134/S1063782615010108

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  • DOI: https://doi.org/10.1134/S1063782615010108

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