Abstract
Using the results of technological experiments based on a two-component kinetic model (SiH4 → SiH3 + SiH), the range of characteristic decomposition frequencies of silicon-hydride molecule radicals adsorbed by the layer growth surface in the temperature range of 450–700°C is determined; the degree of silicon surface coverage by SiH radicals under epitaxial-growth conditions is estimated. The behavior of the temperature dependences of the factor of surface filling by individual molecule fragments and the rate of their decomposition on the silicon surface are determined under various conditions corresponding to a constant concentration ratio of monosilane radicals (SiH = gSiH3) or constant rates of their decomposition \(\left( {v_{SiH_3 } = \xi v_{SiH} } \right)\) in the entire temperature range. It is shown that the observed shape of the temperature dependence of the molecule decomposition rate on the growth surface is not described by simple activation-type curves, which is associated with features of the interaction of the molecular hydride beam with the Si surface under conditions of low and high levels of surface-bond saturation with hydrogen. The effect of the mechanism of the adsorption of hydrogen atoms and various conditions of their transfer from the molecule to the growth surface on the temperature dependences is considered.
Similar content being viewed by others
References
D. V. Brunev, A. N. Karpov, I. G. Neizvestny, N. L. Shwartz, and Z. Sh. Yanovitskaya, Int. J. Nanosci. 3, 9 (2004).
A. K. Myers-Beaghton and D. D. Vvedenski, Phys. Rev. B 42, 9720 (1990).
I. L. Aleiner and R. A. Suris, Sov. Phys. Solid State 34, 809 (1992).
K. Werner, S. Butzke, S. Radelaar, and F. Balk, J. Cryst. Growth 136, 338 (1994).
R. D. Smardon and G. P. Srivastava, J. Chem. Phys. 123, 174703 (2005).
R. Q. M. Ng, E. S. Tok, and H. C. Kang, J. Chem. Phys. 131, 044707 (2009).
A. V. Potapov, L. K. Orlov, and S. V. Ivin, Thin Solid Films 336, 191 (1999).
L. K. Orlov and S. V. Ivin, Semiconductors 45, 557 (2011).
L. K. Orlov and T. N. Smyslova, Tech. Phys. 57, 1547 (2012).
K. Sinniah, M. G. Sherman, L. B. Lewis, W. H. Weinberg, J. T. Yates, and K. C. Janda, Phys. Rev. Lett. 62, 567 (1989).
C. M. Greenlief and M. Lier, Appl. Phys. Lett. 64, 601 (1994).
R. W. Price, E. S. Tok, and J. Zhang, J. Cryst. Growth 209, 306 (2000).
A. V. Potapov and L. K. Orlov, Phys. Status Solidi C 195, 853 (2003).
A. V. Potapov, Crystallogr. Rep. 49, 220 (2004).
J. Shi, E. S. Tok, and H. C. Kang, J. Chem. Phys. 127, 164713 (2007).
M. Shinohara, A. Seyama, Y. Kimura, and M. Niwano, Phys. Rev. B 65, 075319 (2002).
A. Yoshigoe, K. Mase, Y. Tsusaka, T. Urisu, Y. Kobayashi, and T. Ogino, Appl. Phys. Lett. 67, 2364 (1995).
S. M. Gates, C. M. Greenlief, and D. B. Beach, J. Chem. Phys. 93, 7493 (1990).
K. J. Kim, M. Suemitsu, M. Yamanaka, and N. Miyamoto, Appl. Phys. Lett. 62, 3461 (1993).
B. A. Ferguson, C. T. Reeves, D. J. Safarik, and C. B. Mullins, J. Phys. Chem. 113, 2470 (2000).
U. Hofer, L. Li, and T. F. Heinz, Phys. Rev. B 45, 9485 (1992).
L. K. Orlov and T. N. Smyslova, Semiconductors 39, 1275 (2005).
L. K. Orlov, S. V. Ivin, and T. N. Smyslova, Russ. J. Phys. Chem. B 5, 168 (2011).
L. K. Orlov, N. L. Ivina, and T. N. Smyslova, Russ. J. General Chemistry 83, 2240 (2013).
N. L. Ivina and T. N. Smyslova, Russ. J. Phys. Chem. B 7, 244 (2013).
A. Vittadini and A. Selloni, Phys. Rev. Lett. 75, 4756 (1995).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © N.L. Ivina, L.K. Orlov, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 6, pp. 852–861.
Rights and permissions
About this article
Cite this article
Ivina, N.L., Orlov, L.K. Features of the two-component decomposition of monosilane molecules on a silicon surface under epitaxial-process conditions. Semiconductors 48, 828–837 (2014). https://doi.org/10.1134/S106378261406013X
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S106378261406013X