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Charge Transport in Layer Gallium Monosulfide in Direct and Alternate Electric Fields

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Abstract

It was established that the variable-range-hopping mechanism of dc-conductivity takes place in the GaS single crystal at low temperatures. The parameters of localized states in the forbidden gap of studieGaS samples have been evaluated. Dielectric properties (loss tangent, real (ε') and imaginary (ε'') parts of complex dielectric permittivity and ac-conductivity across the layers of the GaS layered single crystals have been studied in the frequency range f = 5 × 104 to 3.5 × 107 Hz. The results demonstrate that the dielectric dispersion in the GaS single crystal has a relaxation nature. Over the studied frequency range, the ac-conductivity of the GaS crystal varies as f0.8, characteristic of hopping conduction through localized states near the Fermi level. The Fermi-level density of states, the spread of their energies, and the mean hop distance and time have been estimated.

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Funding

This study was supported by the Science Development Foundation of the President of the Republic of Azerbaijan, grants EİF-BGM-3-BRFTF-2+/2017-15/05/1-M-13, EİF-BGM-4-RFTF-1/2017-21/05/1-M-07, RFFR (project 18-57-06001 Аz_а 2018), and SOCAR (project no. 12 LR-AMEA).

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Authors and Affiliations

  1. Institute of Сatalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences, AZ-1143, Baku, Azerbaijan

    S. M. Asadov

  2. Institute of Physics, Azerbaijan National Academy of Sciences, AZ-1143, Baku, Azerbaijan

    S. N. Mustafaeva

  3. Valiev Institute of Physics and Technology, Russian Academy of Sciences, 117218, Moscow, Russia

    V. F. Lukichev

Authors
  1. S. M. Asadov
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  2. S. N. Mustafaeva
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  3. V. F. Lukichev
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Correspondence to S. N. Mustafaeva.

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Asadov, S.M., Mustafaeva, S.N. & Lukichev, V.F. Charge Transport in Layer Gallium Monosulfide in Direct and Alternate Electric Fields. Russ Microelectron 48, 422–427 (2019). https://doi.org/10.1134/S1063739719660016

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