Abstract
The formation of silicon-nitrogen nanolayers obtained by molecular layer deposition on the GaAs surface with (100) and (110) orientations in the temperature range 473–773 K with discharge activation at the ammonia supply stage was studied. The conditions for growth of silicon nitride nanostructures and the layer mechanism of their formation were determined.
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Ezhovskii, Y.K., Mikhailovskii, S.V. Molecular Layer Deposition of Silicon Nitride with Glow Discharge Activation. Russ. J. Phys. Chem. 92, 547–551 (2018). https://doi.org/10.1134/S003602441803007X
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DOI: https://doi.org/10.1134/S003602441803007X