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Investigation of the Morphology and Electrical Properties of Structures Based on a Single-Crystal Si/Microcrystalline ZnO Heterojunction

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Abstract—

The results of an experimental study of the surface morphology of zinc-oxide films and the electrical properties of structures based on a single-crystal Si/microcrystalline ZnO heterojunction are presented. An analysis of the structure of the zinc-oxide films grown in argon and oxygen atmospheres is carried out, and the size distribution of nanofibers grown on its surface is obtained. The capacitance–voltage characteristics of In/ZnO/n-Si/Al and Au/ZnO/n-Si/Al heterostructures are simulated. On the basis of calculations and comparison of the experimental and simulated dependences, the concentration of free charge carriers in the sample and the position of the Fermi level are determined, the presence of a fixed charge in the system is revealed, and the density of surface states is found based on the ratio of the voltage applied to the system and the surface potential at the interface between layers. The value of the built-in surface charge is calculated. The relationship between the material of the upper contacts and the capacitance–voltage and current–voltage characteristics of the system is studied. The resistance of the formed zinc-oxide films is calculated. The prevailing charge-transfer mechanisms are discussed. An empirical dependence of the surface potential of silicon on the voltage applied to the structure is revealed. The effect of technological modes for obtaining zinc-oxide films synthesized by spray pyrolysis on the surface structure, effective capacitance of the structure, density of electronic states, and processes of charge-carrier transfer in samples under the action of an electric field is analyzed.

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ACKNOWLEDGMENTS

We are grateful to D.G. Gromov and S.P. Oleinik (National Research University, Moscow Institute of Electronic Engineering) for providing the samples for the study.

Funding

The study was carried out as part of a state task of the Ministry of Science and Higher Education of the Russian Federation (FSSN-2020-0003) using equipment of the Regional Center for Probe Microscopy for Collective Use of Utkin Ryazan State Radio Engineering University.

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  1. Utkin Ryazan State Radio Engineering University, 390005, Ryazan, Russia

    A. R. Semenov, V. G. Litvinov, T. A. Kholomina, A. V. Ermachikhin & N. B. Rybin

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  1. A. R. Semenov
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  2. V. G. Litvinov
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  3. T. A. Kholomina
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  4. A. V. Ermachikhin
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  5. N. B. Rybin
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Correspondence to A. R. Semenov or T. A. Kholomina.

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Translated by S. Rostovtseva

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Semenov, A.R., Litvinov, V.G., Kholomina, T.A. et al. Investigation of the Morphology and Electrical Properties of Structures Based on a Single-Crystal Si/Microcrystalline ZnO Heterojunction. J. Surf. Investig. 17, 1134–1142 (2023). https://doi.org/10.1134/S1027451023050324

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