Abstract
The modification of the (111) face of synthetic diamond under high-fluence (≥1018 ion/cm2) 30-keV Ar+ irradiation is studied experimentally. It is found that ion irradiation at room temperature results in the formation of a low-conductivity surface layer. Heat treatment when the target temperature is increased to 400°C results in a more than ten-fold exponential drop in the layer resistance, as compared to its value at room temperature. If the temperature of the irradiated diamond is increased from 30 to 400°C the layer resistance of the ion-induced conductive layer drops by more than two orders of magnitude to the level corresponding to the conductivity of graphite-like materials. The Raman spectra of the ion-induced conductive surface layer reflect the processes of structural disorder—sp 2-carbon ordering and strong changes in the optical transmittance of diamond after ion irradiation.
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Original Russian Text © A.M. Borisov, V.A. Kazakov, E.S. Mashkova, M.A. Ovchinnikov, Yu.N. Palyanov, V.P. Popov, E.A. Shmytkova, 2017, published in Poverkhnost’, 2017, No. 6, pp. 49–55.
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Borisov, A.M., Kazakov, V.A., Mashkova, E.S. et al. Optical and electrical properties of synthetic single-crystal diamond under high-fluence ion irradiation. J. Surf. Investig. 11, 619–624 (2017). https://doi.org/10.1134/S1027451017030211
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DOI: https://doi.org/10.1134/S1027451017030211