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State of Stress in the Near-Contact Region of a Semiconductor during Metallization Track Electrodegradation

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Abstract

Heating of a thin metal film on a semiconductor surface and the corresponding state of stress of the near-contact region are considered. The stress estimation procedure in case of the local pulsed heating of a metallized region on the semiconductor surface is described. The theoretical and experimental sizes of the deformed silicon substrate region are compared with each other. An experiment is carried out using rectangular current pulses. The stress–strain region, which depends on the electric pulse duration and amplitude, is estimated. Experimental evidence shows a strong heterogeneity of the metallization track after pulse passage.

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Funding

This work was supported by the Russian Foundation for Basic Research, projects 18-07-00564 and 18-29-27005.

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Authors and Affiliations

  1. Moscow Polytechnic University, 107023, Moscow, Russia

    A. A. Skvortsov, S. M. Zuev, M. V. Koryachko & E. B. Voloshinov

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  1. A. A. Skvortsov
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  2. S. M. Zuev
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  3. M. V. Koryachko
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  4. E. B. Voloshinov
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Correspondence to A. A. Skvortsov.

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Translated by T. Gapontseva

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Skvortsov, A.A., Zuev, S.M., Koryachko, M.V. et al. State of Stress in the Near-Contact Region of a Semiconductor during Metallization Track Electrodegradation. Russ. Metall. 2020, 1658–1662 (2020). https://doi.org/10.1134/S0036029520130364

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  • DOI: https://doi.org/10.1134/S0036029520130364

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