Abstract
The kinetics of oxygen adsorption and indium oxidation in an oxygen medium with pressures as high as 5000 Langmuir, and at atmospheric pressure and room temperature, is studied via auger-electron spectroscopy. The oxide layer is shown to consist of In2O3 + In + O, where the components are arranged not randomly but in a more or less ordered distribution. First comes a In2O3 + In layer, which is complemented by a layer of adsorbed oxygen. The different electric conductivity of oxide films obtained upon exposure to 5000 Langmuir and at atmospheric pressure is noted.
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REFERENCES
O. G. Ashkhotov and A. A. Shebzukhov, Poverkhnost: Fiz., Khim., Mekh., No. 10, 101 (1982).
O. G. Ashkhotov, Doctoral (Math. Phys.) Dissertation (Nal’chik, 1997).
C. D. Wagner et al., X-ray Photoelectron Spectroscopy Database of the National Institute of Standards and Technology (NIST, 2015).
X-ray Photoelectron Spectroscopy Database of the National Institute of Standards and Technology. http://srdata.nist.gov.xps. Accessed 2015.
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Translated by T. Safonova
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Ashkhotov, O.G., Ashkhotova, I.B. Auger Electron Spectroscopic Study of Polycrystalline Indium Oxidation. Russ. J. Phys. Chem. 93, 748–750 (2019). https://doi.org/10.1134/S0036024419040046
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DOI: https://doi.org/10.1134/S0036024419040046