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Efficient Process of ALD CuO and Its Application in Photocatalytic H2 Evolution

  • INORGANIC MATERIALS AND NANOMATERIALS
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Abstract

As a cost-effective material, CuO has been widely used in many emerging fields. The synthesis method plays a key role in the performance of the material. Atomic layer deposition (ALD) has been developed as a precise technique to deposit materials with great control at atomic scale. Herein, an efficient process of ALD CuO is reported by using [Cu(sBu-amd)]2 and O3 as precursors. CuO films can be deposited on SiO2 substrates with typical self-limiting growth behaviors at 120–220°C. Notably, the growth rate of the CuO films is reach up to 2.5 Å/cycle, which is 6~12 times more than the available value. This remarkably high efficiency is the critical factor to promote the large-scale applications of ALD CuO materials. Furthermore, CuO is deposited on TiO2 nano-particles (forming CuO/TiO2 composite) using this ALD process to evaluate its performance for H2 evolution. The 0.37 wt % CuO/TiO2 composite (120 cycles CuO/TiO2) can achieve a H2 evolution rate of 3995 μmol g–1 h–1, which is nearly 200 times larger than pure TiO2.

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Funding

We gratefully acknowledge financial support for this work from the Natural Science Foundation of Jiangsu Province (no. BK20190602).

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Authors and Affiliations

  1. International Joint Research Center for Photoresponsive Molecules and Materials, School of Chemical and Material Engineering, Jiangnan University, 214122, Wuxi, China

    Dongmei He, Liyong Du, Keyan Wang & Yuqiang Ding

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  1. Dongmei He
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  2. Liyong Du
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Correspondence to Yuqiang Ding.

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Dongmei He, Du, L., Wang, K. et al. Efficient Process of ALD CuO and Its Application in Photocatalytic H2 Evolution. Russ. J. Inorg. Chem. 66, 1986–1994 (2021). https://doi.org/10.1134/S0036023621130040

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