Abstract
A significant (almost two orders of magnitude) increase in the intensity of photo- and electroluminescence of a diode structure with an InGaAs/GaAsSb/GaAs quantum well, GaMnAs layer as a spin injector, and contact coating of a multilayer graphene film has been experimentally detected. The result has been explained by the possible formation of a hybrid system of multilayer graphene and GaAs semiconductor under the influence of He–Ne laser radiation, which leads to a change in the band diagram of the heterostructure.
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ACKNOWLEDGMENTS
We express our deep gratitude to M.A. Kaneski (Center for Semiconductor Components and Nanotechnologies, University of Campinas) for his assistance in obtaining the Raman spectra of the studied structures.
Funding
This work was carried out with the support of the Russian Foundation for Basic Research (grant no. 18-29-19137_mk) and with the partial support of grant no. 19-19-00545 of the Russian Science Foundation (fabrication of structures using pulsed laser deposition).
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Alaferdov, A.V., Vikhrova, O.V., Danilov, Y.A. et al. The Use of Films of Multilayer Graphene as Coatings of Light-Emitting GaAs Structures. Opt. Spectrosc. 128, 387–394 (2020). https://doi.org/10.1134/S0030400X20030030
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DOI: https://doi.org/10.1134/S0030400X20030030