Abstract
Resonance properties of nanomechanical resonators based on doubly clamped silicon nanowires, fabricated from silicon-on-insulator and coated with a thin layer of aluminum, were experimentally investigated. Resonance frequencies of the fundamental mode were measured at a temperature of 20 mK for nanowires of various sizes using the magnetomotive scheme. The measured values of the resonance frequency agree with the estimates obtained from the Euler–Bernoulli theory. The measured internal quality factor of the 5 μm-long resonator, 3.62 × 104, exceeds the corresponding values of similar resonators investigated at higher temperatures. The structures presented can be used as mass sensors with an expected sensitivity ~6 × 10−20 g Hz–1/2.
Similar content being viewed by others
References
K. L. Ekinci and M. L. Roukes, Rev. Sci. Instrum. 76, 061101 (2005). doi 10.1063/1.1927327
W.-M. Zhang, K.-M. Hu, Z. K. Peng, and G. Meng, Sensors 15, 26478 (2015). doi 10.3390/s151026478
B. Arash, J.-W. Jiang, and T. Rabczuk, Appl. Phys. Rev. 2, 021301 (2015). doi 10.1063/1.4916728
Y. Greenberg, Yu. A. Pashkin, and E. V. Ilichev, Phys. Usp. 55, 1382 (2012). doi 10.3367/UFNr.0182.201204c.0407
V. V. Shorokhov, D. E. Presnov, S. V. Amitonov, Yu. A. Pashkin, and V. A. Krupenin, Nanoscale 9, 613 (2017). doi 10.1039/C6NR07258E
G. Lovat, B. Choi, D.W. Paley, M. L. Steigerwald, L. Venkataraman, and X. Roy, Nat. Nanotechnol. 12, 1050 (2017). doi 10.1038/nnano.2017.156
E. S. Soldatov, V. V. Khanin, A. S. Trifonov, S. P. Gubin, V. V. Kolesov, D. E. Presnov, S. A. Iakovenko, G. B. Khomutov, and A. N. Korotkov, Phys. Usp. 41, 202 (1998). doi 10.1070/PU1998v041n02ABEH000364
S. T. Bartsch, M. Arp, and A. M. Ionescu, IEEE J. Electron Dev. Soc. 2 (2), 8 (2014). doi 10.1109/JEDS.2013.2295246
B. Ilic, Y. Yang, and H. G. Craighead, Appl. Phys. Lett. 85, 2604 (2004). doi 10.1063/1.1794378
H. Mamin and D. Rugar, Appl. Phys. Lett. 79, 3358 (2001). doi 10.1063/1.1418256
X. Zhao, J. M. Tsai, H. Cai, X. M. Ji, J. Zhou, M. H. Bao, Y. P. Huang, D. L. Kwong, and A. Q. Liu, Opt. Express 20, 8535 (2012). doi 10.1364/OE.20.008535
R. G. Knobel and A. N. Cleland, Nature (London, U.K.) 424, 291 (2003). doi 10.1038/nature01773
A. A. Shevyrin, A. G. Pogosov, M. V. Budantsev, A. K. Bakarov, A. I. Toropov, E. E. Rodyakina, and A. A. Shklyaev, Appl. Phys. Lett. 106, 183110 (2015). doi 10.1063/1.4920932
A. Naik, O. Buu, M. D. LaHaye, A. D. Armour, A. A. Clerk, M. P. Blencowe, and K. C. Schwab, Nature (London, U.K.) 443, 193 (2006). https://www.nature.com/articles/nature05027.
J. Teufel, T. Donner, D. Li, J. W. Harlow, M. S. Allman, K. Cicak, A. J. Sirois, J. D. Wittaker, K. W. Lehnert, and R. W. Simmonds, Nature (London, U.K.) 475, 359 (2011). https://www.nature.com/articles/ nature10261
K. Harrabi, Yu. A. Pashkin, O. V. Astafiev, S. Kafanov, T. F. Li, and J. S. Tsai, Appl. Phys. A 108, 7 (2012). doi 10.1007/s00339-012-6981-8
D. I. Bradley, R. George, A. M. Guénault, R. P. Haley, S. Kafanov, M. T. Noble, Yu. A. Pashkin, G. R. Pickett, M. Poole, J. R. Prance, M. Sarsby, R. Schanen, V. Tsepelin, T. Wilcox, and D. E. Zmeev, Sci. Rep. 7, 4876 (2017). doi 10.1038/s41598-017-04842-y
D. W. Carr, S. Evoy, L. Sekaric, H. G. Craighead, and J. M. Parpia, Appl. Phys. Lett. 75, 920 (1999). doi 10.1063/1.124554
K. L. Ekinci, X. M. H. Huang, and M. L. Roukes, Appl. Phys. Lett. 84, 4469 (2004). doi 10.1063/1.1755417
A. N. Cleland and M. L. Roukes, Appl. Phys. Lett. 69, 2653 (1996). doi 10.1063/1.117548
K. Mori, in Silicon-On-Insulator (SOI) Technology (Woodhead, Singapore, 2014), Chap. 14, p. 435. doi 10.1533/9780857099259.2.435
D. E. Presnov, S. V. Amitonov, P. A. Krutitskii, V. V. Kolybasova, I. A. Devyatov, V. A. Krupenin, and I. I. Soloviev, Beilstein J. Nanotechnol. 4, 330 (2013). doi 10.3762/bjnano.4.38
D. E. Presnov, S. V. Amitonov, and V. A. Krupenin, Russ. Microelectron. 41, 364 (2012). doi 10.1134/S1063739712050034
M. Rubtsova, G. Presnova, D. Presnov, V. Krupenin, V. Grigorenko, and A. Egorov, in Proceedings of the Congress on Biosensors 2016, May 25–27, Gothenburg, Sweden, Proc. Technol. 27, 234 (2017). doi 10.1016/j.protcy.2017.04.099
A. S. Trifonov, D. E. Presnov, I. V. Bozhev, D. A. Evplov, V. Desmaris, and V. A. Krupenin, Ultramicroscopy 179, 33 (2017). doi 10.1016/j.ultramic.2017.03.030
A.N. Cleland, Foundations of Nanomechanics (Springer, Berlin, 2003). doi 10.1007/978-3-662-05287-710.1007/978-3-662-05287-7
A. H. Nayfeh and D. T. Mook, Nonlinear Oscillations (Wiley–VCH, Weinheim, 2007). doi 10.1002/9783527617586
H. W. Ch. Postma, I. Kozinsky, A. Husain, and M. L. Roukes, Appl. Phys. Lett. 86, 223105 (2005). doi 10.1063/1.1929098
F. Tajaddodianfar, M. R. H. Yazdi, and H. N. Pishkenari, Microsyst. Technol. 23, 1913 (2017). doi 10.1007/s00542-016-2947-7
L. Laurent, J. J. Yon, J. S. Moulet, P. Imperinetti, and L. Duraffourg, Sens. Actuators, A 263, 326 (2017). doi 10.1016/j.sna.2017.06.027
T. F. Li, Yu. A. Pashkin, O. Astafiev, Y. Nakamura, and J. S. Tsai, Appl. Phys. Lett. 92, 043112 (2008). doi 10.1063/1.2838749
E. Buks and B. Yurke, Phys. Rev. E 74, 046619 (2017). doi 10.1103/PhysRevE.74.046619
A. N. Cleland and M. L. Roukes, Sens. Actuators 72, 256 (1999). doi 10.1016/S0924-4247(98)00222-2
L. Yu, H. Pajouhi, M. R. Nelis, J. F. Rhoads, and S. Mohammadi, IEEE Trans. Nanotechnol. 11, 1093 (2012). doi 10.1109/TNANO.2012.2212028
G. Zolfagharkhani, A. Gaidarzhy, S. Shim, R. L. Badzey, and P. Mohanty, Phys. Rev. B 72, 224101 (2005). doi 10.1103/PhysRevB.72.224101
J. Sulkko, M. Sillanpää, P. Häkkinen, L. Lechner, M. Helle, A. Fefferman, J. Parpia, and P. Hakonen, Nano Lett. 10, 4884 (2010). doi 10.1021/nl102771p
F. Hoehne, Yu. A. Pashkin, O. Astafiev, L. Faoro, L. B. Ioffe, Y. Nakamura, and J. S. Tsai, Phys. Rev. B 81, 184112 (2010). doi 10.1103/PhysRevB.81.184112
M. Imboden and P. Mohanty, Phys. Rev. B 79, 125424 (2009). doi 10.1103/PhysRevB.79.125424
Author information
Authors and Affiliations
Corresponding author
Additional information
Published in Russian in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2018, Vol. 108, No. 7, pp. 522–528.
The article is published in the original.
Rights and permissions
About this article
Cite this article
Presnov, D.E., Kafanov, S.G., Dorofeev, A.A. et al. High Quality Factor Mechanical Resonance in a Silicon Nanowire. Jetp Lett. 108, 492–497 (2018). https://doi.org/10.1134/S0021364018190037
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S0021364018190037